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236ab Datasheet PDF File

For 236ab Found Datasheets File :: 1023 Search Time::1.078ms
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				NXP Semiconductors N.V.
Part No.	2N7002CK
OCR Text	...stor (FET) in a small SOT23 (TO-236ab) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1....
Description	60 V, 0.3 A N-channel Trench MOSFET 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236ab
File Size	70.46K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PBRN123Y PBRN123YK PBRN123YS PBRN123YT
OCR Text	...-43A - JEDEC TO-236 TO-92 TO-236ab SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simp...
Description	NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k? NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
File Size	148.58K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PBRN123E PBRN123EK PBRN123ES PBRN123ET
OCR Text	...-43A - JEDEC TO-236 TO-92 TO-236ab SOT346 SOT54 SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2). 1.2 Features I 800 mA output current capability I High current gain hFE I Built-in bias resistors I Simp...
Description	NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 2.2 kOhm NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 2.2 k? NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 2.2 k??
File Size	146.22K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMBD914_DG PMBD91409 PMBD914/DG PMBD914-15
OCR Text	...e Type number[1] JEDEC TO-236ab SOT23 1.2 Features I High switching speed: trr 4 ns I Low leakage current I Repetitive peak reverse voltage: VRRM 100 V I Low capacitance: Cd 1.5 pF I Reverse voltage: VR 100 V I Small SMD pl...
Description	Single high-speed switching diode Single high-speed switching diode
File Size	57.51K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BAS101S BAS10109
OCR Text	...6. Package outline SOT23 (TO-236ab) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package BAS101 BAS101S [1] For further information and the a...
Description	High-voltage switching diodes
File Size	106.62K / 11 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MMBD352 MMBD352LT1 MMBD353LT1 MMBD354LT1 MMBD355LT1 ON2079
OCR Text	...18 - 08, STYLE 11 SOT- 23 (TO - 236ab) 1 CATHODE 3 CATHODE/ANODE 2 ANODE MMBD353LT1 CASE 318 - 08, STYLE 19 SOT- 23 (TO - 236ab) DEVICE MARKING MMBD352LT1 = M5G; MMBD353LT1 = M4F; MMBD354LT1 = M6H; MMBD355LT1 = MJ1 3 CATHODE...
Description	Dual Hot Carrier Mixer Diodes From old datasheet system
File Size	72.11K / 4 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PMBTA44
OCR Text	...BISS) transistor in a SOT23 (TO-236ab) small Surface-Mounted Device (SMD) plastic package. 1.2 Features I Low current (max. 300 mA) I High voltage (max. 400 V) I AEC-Q101 qualified 1.3 Applications I I I I I I LED driver for LED cha...
Description	400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor
File Size	89.39K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PBRP113ET
OCR Text	...stor (RET) in a small SOT23 (TO-236ab) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN113ET. 1.2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit ...
Description	PNP 800 mA, 40 V BISS RET; R1 = 1 kOhm, R2 = 1 kOhm PNP 800 mA, 40 V BISS RET; R1 = 1 kW, R2 = 1 kW
File Size	104.57K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15
OCR Text	...5. Package outline SOT23 (TO-236ab) 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PDTD113ZT [1] Package SOT23 Description 4 mm pitch, 8 m...
Description	NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236ab); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236ab NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
File Size	56.39K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	PESD5V0U2BT
OCR Text	...protection diode in a SOT23 (TO-236ab) small Surface-Mounted Device (SMD) plastic package designed to protect two data lines from the damage caused by ESD. 1.2 Features I Bidirectional ESD protection of two lines I Ultra low leakage cur...
Description	Ultra low capacitance bidirectional double ESD protection diode
File Size	64.95K / 11 Page	View it Online	Download Datasheet

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