32m x 8 banks x 8 bit ddr2 sdr pdf Datasheet P8 Description --- IC-ON-LINE

32m x 8 banks x 8 bit ddr2 sdr Datasheet PDF File

For 32m x 8 banks x 8 bit ddr2 sdr Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM416RD8AC KM418RD2AC KM418RD2AD KM418RD2C KM418RD32AD KM418RD32C KM418RD32D KM418RD4AC KM418RD4AD KM418RD4C KM418RD4D KM418RD8ACD-RK70 KM418RD8ACD-RK80 KM418RD8AD KM418RD8C KM418RD32AC KM418RD8AC KM418RD8ACD-RG60 KM418RD8D KM418RD2D KM416RD8D KM416RD16AC KM416RD16AD KM416RD16C KM416RD16D KM416RD2AC KM416RD2AD KM416RD2C KM416RD2D KM416RD32AC KM416RD32AD KM416RD32C KM416RD32D KM416RD4AC KM416RD4AD KM416RD4C KM416RD4D KM416RD8AC_D-RK70 KM416RD8AC_D-RK80 KM416RD8AC_DB-RCG60 KM416RD8AD KM416RD8C KM416RD8ACD-RK80 KM416RD8ACDB-RCG60 KM416RD8ACD-RK70 KM416RD8AC-RK70 KM416RD8AD-RK70 KM418RD8AC-RK70 KM418RD8AD-RK70 KM418RD8AC-RK80 KM418RD16AD
Description	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 711 Mbps(356 MHz). 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, speed: 800 Mbps(400 MHz).
File Size	4,041.48K / 64 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4S643232E-TC70 K4S643232E K4S643232E-TC45 K4S643232E-TC50 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TL50 K4S643232E-TL60 K4S643232E-TC/L/E/N/I/P
Description	2M x 32 sdrAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL 2M x 32 sdrAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL 512K x 32bit x 4 banks Synchronous DRAM Data Sheet
File Size	100.95K / 12 Page	View it Online	Download Datasheet

				AMIC Technology, Corp.
Part No.	PUMA2F16000I-25 PUMA2F16000M-15 PUMA2F16000M-20 PUMA2F16000I-15 PUMA2F16000I-20
Description	x32 Flash EEPROM Module Low Noise, Regulated Charge Pump, Adjustable Output, MSOP 2-Kb I²C EEPROM for ddr2 DIMM Serial Presence Detect, TDFN 2-Kb I<sup>2</sup>C EEPROM for ddr2 DIMM Serial Presence Detect, TDFN x32号，闪存EEPROM模块
File Size	918.07K / 15 Page	View it Online	Download Datasheet

				Infineon
Part No.	HYS64T64020GDL-3.7-A HYS64T64020GDL-5-A HYS64T32000GDL-3.7-A HYS64T32000GDL-5-A
Description	ddr2 sdrAM Modules - 512MB (64Mx64) PC2 4300 4-4-4 2Bank; available 3Q/04 ddr2 sdrAM Modules - 512MB (64Mx64) PC2 3200 3-3-3 2Bank; available 3Q/04 ddr2 sdrAM Modules - 256MB (32mx64) PC2 4300 4-4-4 1Bank; available 3Q/04 ddr2 sdrAM Modules - 256MB (32mx64) PC2 3200 3-3-3 1Bank; available 3Q/04
File Size	378.27K / 21 Page	View it Online	Download Datasheet

				Winbond Electronics WINBOND[Winbond]
Part No.	W986432AH W986432AHA1
Description	512K x 4 banks x 32 bitS sdrAM 512K x 4 banks x 32 bitS sdrAM From old datasheet system
File Size	1,343.55K / 44 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S510832m K4S510832m-TC_TL1H K4S510832m-TC_TL1L K4S510832m-TC_TL75 K4S510832m-TC1H K4S510832m-TC1L K4S510832m-TL75 K4S510832m-TC75 K4S510832m-TL1H K4S510832m-TL1L K4S510832m-TC/TL1L K4S510832m-TC/TL1H K4S510832m-TC/TL75
Description	16M x 8bit x 4 banks Synchronous DRAM Data Sheet 16M x 8bit x 4 banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
File Size	110.61K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. http:// Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V64820HGLTP-5 HY57V64820HGLTP-55 HY57V64820HGLTP-6 HY57V64820HGLTP-8 HY57V64820HGLTP-H HY57V64820HGLTP-K HY57V64820HGLTP-P HY57V64820HGLTP-S HY57V64820HGTP-5 HY57V64820HGTP HY57V64820HGTP-55 HY57V64820HGTP-6 HY57V64820HGTP-7 HY57V64820HGTP-8 HY57V64820HGTP-H HY57V64820HGTP-K HY57V64820HGTP-P HY57V64820HGTP-S HY57V64820HGLTP-7
Description	4 banks x 2M x 8bit Synchronous DRAM 8M x 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4 banks x 2M x 8bit Synchronous DRAM 8M x 8 SYNCHRONOUS DRAM, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN 8M x 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 220uF; Voltage: 25V; Case Size: 8x11.5 mm; Packaging: Bulk
File Size	74.79K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIx[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
Description	sdrAM - 64Mb 4 banks x 1M x 16bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 banks x 1M x 16bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 sdrAM x16内存 4 banks x 1M x 16bit Synchronous DRAM 4M x 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% x7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:x7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TP60 K4S643232F-TP70 K4S643232F- K4S643232F-TI60 K4S643232F-TI70
Description	2M x 32 sdrAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL3.3V -2M x 32 sdrAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL3.3V CONNECTOR ACCESSORY 2M x 32 sdrAM 512K x 32bit x 4 banks Synchronous DRAM LVTTL3.3V 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3V
File Size	98.11K / 12 Page	View it Online	Download Datasheet

				Samsung Electronic Electronic Theatre Controls, Inc.
Part No.	KM48S8030CT-FL KM48S8030CT-GFH KM48S8030CT-GF7
Description	2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 143MHz 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz 8M x 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 x 0.875 INCH, 0.80 MM PITCH, TSOP2-54
File Size	125.72K / 11 Page	View it Online	Download Datasheet

For 32m x 8 banks x 8 bit ddr2 sdr Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |