TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 10 AMPERES 1000 VOLTS
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3 AMPERES 250 VOLTS RDS(on) = 1.4 OHM
3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime.; A IR2136 packaged in a lead-Free 28-lead SOIC 场效应管输出光耦合 3 Phase Driver, Soft Turn-on, Inverting Input Separate High and Low Side Inputs, 200ns Deadtime.; Similar to IR2136S with lead-Free Packaging shipped on Tape and Reel FET-OUTPUT OPTOCOUPLER 8-PIN SOP 200 V BREAK DOWN VOLTAGE 2-ch Optical Coupled MOS FET
TRANSISTOR OUTPUT SOLID STATE RELAY, 500 V ISOLATION-MAX 4-PIN ULTRA SMALL FLAT-lead, LOW C × R, 1-ch Optical Coupled MOS FET 4-PIN ULTRA SMALL FLAT-lead, LOW C 隆驴 R, 1-ch Optical Coupled MOS FET
100V4A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V4A TMOS功率场效应管(N沟道增强型硅门)) TMOS POWER FET 14 AMPERES From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM From old datasheet system
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS(on) = 8.0 OHM From old datasheet system
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM From old datasheet system
27 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 100V7A TMOS Power Field Effect Transistor (N-Channel Enhancement Mode Silicon Gate100V7A TMOS功率场效应管(N沟道增强型硅门)) From old datasheet system TMOS POWER FET 27 AMPERES TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate