...gned to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this docu...
...-60 -25 -50 -7 85 40 - 0.35 200 6
*2
min
typ
max - 0.1 -1
2.00.2
Unit A A V
V V 340
Emitter to base voltage Forward cu...12
-1
-3
-10
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Colle...
...00 150 -120 -120 -5 180 520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V
*h
FE
Rank classification
R 180 ~ 360 S 260 ~ 520 h...12 -30A -25A -8 -20A -15A -4 -10A -5A 0
350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 16...
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification)
... -3 V Pulse
Ta = 25C
-0
.6
m
Collector Current IC (A)
-1
-0.8
m
-0.6
m -0.2 -0.1 m
W
-0.4
-0.04
m
...12.5 x 30 x 0.7 mm)
10 m
100 m
1 Time t (s)
10
100
1,000
4
Unit: mm
4.5 ...
... IC PC Tj Tstg Ratings -70 -50 -6 -1 0.75 150 -55 to +150 Unit V V V A W C C
Electrical Characteristics (Ta = 25C)
Item Collector to bas...12.7 Min
5.0 0.2
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value)
TO-9...
...o hFE
0 -1. .9 -00.8 - -0.7 -0.6
DC Current Transfer Ratio vs. Collector Current 30000 10000 3000 1000 300 100 VCE = -3 V 30 -0.1
Collector current IC (A)
-4
-3
-0.5 -2 -0.4 -1 IB = -0.3 mA
5C TC 5C =2 C T C -25 = TC =7
...