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    KMM464S3323BN

Samsung Semiconductor
Part No. KMM464S3323BN
OCR Text ...8 60 62 64 66 68 70 72 74 76 78 80 82 84 86 88 90 92 94 back dq46 dq47 v ss nc nc cke0 v dd cas cke1 *a12 *a13 clk1 v ss nc nc v dd dq48 dq4...column addresses are multiplexed on the same pins. row address : ra0 ~ ra11, column address : ca0 ~ ...
Description 144pin SDRAM SODIMM

File Size 113.63K  /  9 Page

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    MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
Part No. V43648S04VCTG-75
OCR Text ...9 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Front I/O19 I/O20 VCC I/O21 NC DU CKE1 VSS I/O22 I/O23 I/O24 VSS I/O25 I/O26 I/O27 I/O28 VCC ...Column Address Strobe Read/Write Input Bank Selects Clock Enable Chip Select Clock Input Data Mask P...
Description 3.3 VOLT 8M x 64 HIGH PERFORMANCE PC133 UNBUFFERED SDRAM MODULE

File Size 165.08K  /  12 Page

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    M366S6453CTS M366S6453CTS-L1H_C1H M366S6453CTS-L1L_C1L M366S6453CTS-L7A_C7A M366S6453CTS-L7C_C7C M366S6453CTS-L7A/C7A M3

Samsung semiconductor
Part No. M366S6453CTS M366S6453CTS-L1H_C1H M366S6453CTS-L1L_C1L M366S6453CTS-L7A_C7A M366S6453CTS-L7C_C7C M366S6453CTS-L7A/C7A M366S6453CTS-L7C/C7C M366S6453CTS-L1L/C1L M366S6453CTS-L1H/C1H
OCR Text ...9 VDD 78 50 NC 79 51 NC 52 *CB2 80 53 *CB3 81 82 54 VSS 55 DQ16 83 56 DQ17 84 PIN NAMES Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 CLK0 ~ CL...Column address strobe Write enable DQM Power supply (3.3V) Ground Power supply for reference Serial ...
Description PC133/PC100 Unbuffered DIMM

File Size 168.88K  /  11 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...are Dont care Max K4E170412D 90 80 1 1 90 80 80 70 0.5 200 90 80 250 200 K4E160412D 110 100 1 1 110 100 90 80 0.5 200 110 100 250 200 K4E170...column address CAS to output in Low-Z Output buffer turn-off delay from CAS OE to output in Low-Z Tr...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...are Dont care Max K4F170412D 90 80 1 1 90 80 80 70 0.5 200 90 80 250 200 K4F160412D 110 100 1 1 110 100 90 80 0.5 200 110 100 250 200 K4F170...column address CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) R...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM5144

Hitachi Semiconductor
Part No. HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text ...peed -- Access time 60 ns/70 ns/80 ns (max) * Low power dissipation -- Active mode 605 mW/550 mW/495 mW (max) -- Standby mode 11 mW (max) 0....Column address strobe Read/Write enable Output enable Power (+5 V) Ground 4 Block Diagram RAS...
Description 1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns

File Size 231.12K  /  27 Page

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