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  8ka Datasheet PDF File

For 8ka Found Datasheets File :: 131    Search Time::1.375ms    
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    AD820605 AD8206YCSURF

Analog Devices
Part No. AD820605 AD8206YCSURF
OCR Text ...2 m x 92 m. Passivation type is 8ka USG (Oxide) + 10KA Oxynitride. Bond pad metal composition is 98.5% Al, 1% Si, and 0.5% Cu. Backside potential is V+. Rev. 0 | Page 5 of 12 04953-003 VREF1 TOP VIEW 6 V+ (Not to Scale) 5 OUT NC 4 ...
Description Single-Supply, 42 V System Difference Amplifier

File Size 270.14K  /  12 Page

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    INTERSIL[Intersil Corporation]
Part No. ACS521MS ACS521K FN3111 5962F9670901VRC 5962F9670901VXC ACS521D ACS521HMSR
OCR Text ...SIVATION: Type: SiO2 Thickness: 8ka 1kA WORST CASE CURRENT DENSITY: <2.0 x 105 A/cm2 BOND PAD SIZE: > 4.3mils x 4.3mils > 110m x 110m Metallization Mask Layout ACS521MS (20) VCC (19) YB (18) B7 (1) GB (2) A0 3) B0 A1 ...
Description From old datasheet system
Radiation Hardened 8-Bit Magnitude Comparator

File Size 103.81K  /  3 Page

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    MAX-200

MDE Semiconductor, Inc.
Part No. MAX-200
OCR Text ...EATURES * UL1449 Recognition * 8ka Surge Capability @ 8 x 20 sec waveform (per IEC- 61000-4-5) * Peak Power Dissipation 288KW * Bi-directional * Excellent clamping capability * Repetition rate (duty cycle): 0.05% * Sharp breakdown voltage ...
Description HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR

File Size 197.66K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. ACS125K ACS125D FN3565 ACS125MS 5962F9670501VCC 5962F9670501VXC ACS125HMSR
OCR Text ...SIVATION: Type: SiO2 Thickness: 8ka 1kA WORST CASE CURRENT DENSITY: <2.0 x 105 A/cm2 BOND PAD SIZE: > 4.3 mils x 4.3 mils > 110m x 110m Metallization Mask Layout ACS125MS A1 (2) OE1 (1) VCC (14) OE4 (13) Y1 (3) (12) A4 OE2 (4)...
Description Radiation Hardened Quad Buffer, Three-State
From old datasheet system
Radiation Hardened Quad Buffer Three-State
Radiation Hardened Quad Buffer/ Three-State

File Size 49.98K  /  4 Page

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    HS9-6664RH-T HS1-6664RH-T HS-6664RH-T HS1-6664RH HS9-6664RH

Intersil Corporation
Part No. HS9-6664RH-T HS1-6664RH-T HS-6664RH-T HS1-6664RH HS9-6664RH
OCR Text ...: Type: Silox (SiO2) Thickness: 8ka 1kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 110, 874, (27,719 Gates) PROCESS: AVLSI Si/AI/Cu 2kA 500A TiW M2: 10kA 2kA Si/AI/Cu SUBSTRATE POTENTIAL: VDD BACKSIDE FINISH: Silicon ...
Description Radiation Hardened 8K x 8 CMOS PROM

File Size 178.11K  /  3 Page

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    A13X400-1TA A13X400-2TA A13X400-2TI A13X400-1TI A13X400-4TA A13X400-4TI A13X400-128TA A13X400-128TI

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. A13X400-1TA A13X400-2TA A13X400-2TI A13X400-1TI A13X400-4TA A13X400-4TI A13X400-128TA A13X400-128TI
OCR Text ... Ratings AC: 1-6000A 130VAC, 8ka I.R. DC: 70-2000A 100VDC,10kA I.R. 2500-3000A 100VDC, 20kA I.R. L/R=10ms Approvals UL Recognized Component AC: Guide No. JFHR2 (1-25A, 70-2000A) DC Tested to UL Standard198L parameters (70-3000A) ...
Description SEMICONDUCTOR PROTECTION FUSES

File Size 427.72K  /  4 Page

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    HS1-508BRH_PROTO 5962F9674202QEC 5962F9674202QXC 5962F9674202VEC 5962F9674202VXC

Intersil Corporation
Part No. HS1-508BRH_PROTO 5962F9674202QEC 5962F9674202QXC 5962F9674202VEC 5962F9674202VXC
OCR Text ... Silicon Glass (PSG) Thickness: 8ka 1kA Top Metallization Type: AlSiCu Thickness: 16kA 2kA Substrate Rad Hard Silicon Gate Dielectric Isolation Worst Case Current Density 6.68e04 A/cm2 Transistor Count 506 Backside Finish Silicon ASSEMBLY R...
Description Radiation Hardened 8 Channel CMOS Analog Multiplexer with Overvoltage Protection

File Size 83.63K  /  4 Page

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    HS-26CLV31RH HS1-26CLV31RH_PROTO HS9-26CLV31RH_PROTO 5962F9666302QEC 5962F9666302QXC 5962F9666302VEC 5962F9666302VXC HS9

Intersil Corporation
Part No. HS-26CLV31RH HS1-26CLV31RH_PROTO HS9-26CLV31RH_PROTO 5962F9666302QEC 5962F9666302QXC 5962F9666302VEC 5962F9666302VXC HS9-26CLV31RH/PROTO
OCR Text ...horus Silicon Glass) Thickness: 8ka 1kA Metallization: Bottom: Mo/TiW Thickness: 5800A 1kA Top: AlSiCu (Top) Thickness: 10kA 1kA Substrate: AVLSI1RA Backside Finish: Silicon ASSEMBLY RELATED INFORMATION: Substrate Potential (Powered Up): VD...
Description Radiation Hardened 3.3V Quad Differential Line Driver

File Size 99.95K  /  3 Page

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    HS-26CLV32RH HS1-26CLV32RH-8 HS9-26CLV32RH-8 HS1-26CLV32RH-Q HS9-26CLV32RH-Q HS1-26CLV32RH_PROTO HS9-26CLV32RH_PROTO 596

Intersil Corporation
Part No. HS-26CLV32RH HS1-26CLV32RH-8 HS9-26CLV32RH-8 HS1-26CLV32RH-Q HS9-26CLV32RH-Q HS1-26CLV32RH_PROTO HS9-26CLV32RH_PROTO 5962F9568902QEC 5962F9568902QXC 5962F9568902VEC 5962F9568902VXC HS9-26CLV32RH/PROTO HS1-26CLV32RH/PROTO
OCR Text ...horus Silicon Glass) Thickness: 8ka 1kA Substrate: AVLSI1RA, Silicon backside, VDD backside potential Metallization: Bottom: Mo/Tiw Thickness: 5800A 1kA Top: Al/Si/Cu Thickness: 10kA 1kA Worst Case Current Density: <2.0 x 105A/cm2 Bond Pad ...
Description Radiation Hardened 3.3V Quad Differential Line Receiver

File Size 79.50K  /  3 Page

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    5962R9581304TXC HS9-303RH-T 5962R9581301TCC HS-303RH-T HS1-303RH-T

Intersil Corporation
Part No. 5962R9581304TXC HS9-303RH-T 5962R9581301TCC HS-303RH-T HS1-303RH-T
OCR Text ...: Type: Silox (SiO2) Thickness: 8ka 1kA WORST CASE CURRENT DENSITY: < 2.0e5 A/cm2 TRANSISTOR COUNT: 76 PROCESS: Metal Gate CMOS, Dielectric Isolation Metallization Mask Layout HS-303RH-T S3 V+ S4 D3 D4 D1 D2 S1 S2 ...
Description Radiation Hardened CMOS Dual SPDT Analog Switch

File Size 25.43K  /  2 Page

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