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IRF[International Rectifier]
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Part No. |
IRF7317
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OCR Text |
...ID = 5.2A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 10V, ID = 6.0A VDS = -10V, ID = -1.5A VDS = 16V, VGS = 0V VDS = -16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 55C VDS = -16V, VGS = 0... |
Description |
6.6 A, 20 V, 0.029 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA HEXFET Power MOSFET
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File Size |
147.74K /
10 Page |
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it Online |
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IRF[International Rectifier]
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Part No. |
IRF7319
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OCR Text |
... ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 5.8A VDS = -15V, ID = -4.9A VDS = 24V, V GS = 0V VDS = -24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 55C VDS = -24V, VGS = ... |
Description |
HEXFET Power MOSFET HEXFET?? Power MOSFET
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File Size |
128.05K /
10 Page |
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Download Datasheet |
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TY Semiconductor Co., Ltd
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Part No. |
KI4953DY
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OCR Text |
...=-10v -20 a v gs =-10v,i d = -4.9a 0.043 0.053 v gs =-4.5v,i d = -3.6a 0.070 0.095 forward transconductance* g fs v ds =-15v,i d = -4.9a 10 s schottky diode forward voltage* v sd i s =-1.7a,v gs = 0 v 0.8 -1.2 v total gate charge q g 16 25 ... |
Description |
100per Rg Tested Drain-Source Voltage Vds -30V Gate-Source Voltage Vgs -20V
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File Size |
187.79K /
2 Page |
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Download Datasheet |
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UTC[Unisonic Technologies] 友顺科技股份有限公司 Unisonic Technologies Co., Ltd.
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Part No. |
UF630L-TF3-T UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
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OCR Text |
9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoi... |
Description |
9A, 200V, 0.4?/a> , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS 9A, 200V, 0.4з , N-CHANNEL POWER MOSFETS 9A条,00V.4з的N通道功率MOSFET
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File Size |
163.81K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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