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ALSC[Alliance Semiconductor Corporation]
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Part No. |
AS29LV160T AS29LV160 AS29LV160B
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OCR Text |
...- DQ7 DATA polling - DQ6 toggle bit - RY/BY output * Erase suspend/resume - Supports reading data from or programming data to a sector not being erased * Low VCC write lock-out below 1.5V * 10 year data retention at 150C * 100,000 write/era... |
Description |
3W 2M x 8 / 1M x 16 - CMOS Flash EEPROM
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File Size |
253.15K /
29 Page |
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it Online |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K1S161611A-I DS_K1S161611A K1S161611A DSK1S161611A
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OCR Text |
bit Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 0.1 Initial Draft Revised - Added Lead Free 48-FBGA-6.00x7.00 Product
Draft Date
October 6, 2003
Remark
Preliminary
November 25, 2003... |
Description |
1mx16 bit Uni-Transistor Random Access Memory
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File Size |
178.10K /
10 Page |
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it Online |
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Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
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Part No. |
K1S16161CA-I K1S16161CA DSK1S16161CA
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OCR Text |
bit Page Mode Uni-Transistor Random Access Memory
UtRAM
Revision History
Revision No. History
0.0 Initial Draft
Draft Date
Remark
December 12, 2003 Preliminary
The attached datasheets are provided by SAMSUNG Electronics.... |
Description |
1mx16 bit Page Mode Uni-Transistor Random Access Memory
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File Size |
184.67K /
10 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MH1S64CWXTJ-1539 MH1S64CWXTJ-12 MH1S64CWXTJ-15 MH1S64CWXTJ
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OCR Text |
bit (1048576-WORD BY 64-bit)SynchronousDRAM
DESCRIPTION
The MH1S64CWXTJ is 1048576-word by 64-bit Synchronous DRAM module. This consists of four industry standard 1mx16 Synchronous DRAMs in TSOP and one industory standard EEPROM in TSSO... |
Description |
67108864-bit (1048576-WORD BY 64-bit)SynchronousDRAM From old datasheet system
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File Size |
683.46K /
45 Page |
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it Online |
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Price and Availability
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