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  BT138-800E Datasheet PDF File

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    TOSHIBA[Toshiba Semiconductor]
Part No. 800EXH22
Description FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS)

File Size 117.85K  /  2 Page

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Texas Instruments

Part No. PCM1800E/2K
Description 95dB SNR Stereo ADC with Single-Ended Inputs 24-SSOP
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    EGXE800E

United Chemi-Con, Inc.
Part No. EGXE800E
Description MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS

File Size 45.82K  /  2 Page

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Texas Instruments

Part No. PCM1800E
Description 95dB SNR Stereo ADC with Single-Ended Inputs 24-SSOP
Tech specs    

Official Product Page

    SW12800E

Shenzhen Sunnyway Battery Tech Co.Ltd.
Part No. SW12800E
Description Photovaltaic & wind power battery

File Size 415.42K  /  1 Page

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Renesas Electronics Corporation

Part No. 2SK2800-E
Description Nch Single Power Mosfet 60V 40A 20Mohm To-220Ab
Tech specs    

Official Product Page

    BTA201-800B BTA201-800E BTA201-800ER BTA201-600B BTA201-600E BTA201

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BTA201-800B BTA201-800E BTA201-800ER BTA201-600B BTA201-600E BTA201
Description Triacs logic level

File Size 63.87K  /  12 Page

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    BTA201 BTA201-600B BTA201-600E BTA201-800B BTA201-800E BTA201-800ER

NXP Semiconductors N.V.
Part No. BTA201 BTA201-600B BTA201-600E BTA201-800B BTA201-800E BTA201-800ER
Description 1 A Three-quadrant triacs high commutation

File Size 67.38K  /  12 Page

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    FZ800ED-GPIO-BUZZ

List of Unclassifed Manufacturers
Part No. FZ800ED-GPIO-BUZZ
Description GPIO-BUZZ

File Size 67.61K  /  1 Page

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    NXP Semiconductors N.V.
Part No. BT136-800E BT136-800E127
Description 4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005

File Size 120.34K  /  13 Page

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    SW61800E

Shenzhen Sunnyway Battery Tech Co.Ltd.
Part No. SW61800E
Description Photovaltaic & wind power battery

File Size 473.22K  /  1 Page

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    CM800E2C-66H

Mitsubishi Electric Semiconductor
Part No. CM800E2C-66H
Description 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

File Size 47.58K  /  4 Page

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    CM800E2Z-66H CM8.0E2Z-66H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. CM800E2Z-66H CM8.0E2Z-66H
Description 800 A, 3300 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE
From old datasheet system

File Size 47.43K  /  4 Page

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Part: BT138-800E
Maker: PHI
Pack: TO-220
Stock: Reserved
Unit price for :
    50: $0.28
  100: $0.27
1000: $0.26

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