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  BUK465-200A Datasheet PDF File

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    Hitachi,Ltd.
Part No. HVU200A
Description 29.75 pF, 32 V, SILICON, VARIABLE CAPACITANCE DIODE
Variable Capacitance Diode for Electronic Tuning(?ㄤ??佃?璋??????靛?浜??绠?

File Size 25.96K  /  4 Page

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Renesas Electronics Corporation

Part No. RJP65S08DWA-00#W0
Description IGBT 650V 200A Wafer
Tech specs    

Official Product Page

HUA FENG CIRCUIT





    HVU200A

Renesas Electronics Corporation
Part No. HVU200A
Description Variable Capacitance Diode for VHF tuner

File Size 237.41K  /  5 Page

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Renesas Electronics Corporation

Part No. RJP65S08DWT-80#X0
Description IGBT 650V 200A Chip
Tech specs    

Official Product Page

    SANYO
Part No. KR-1200AUL
Description Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica

File Size 296.82K  /  1 Page

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Renesas Electronics Corporation

Part No. RJP65S08DWT-00#X0
Description IGBT 650V 200A Chip
Tech specs    

Official Product Page

    MT3200A-UR

Marktech Corporate
Part No. MT3200A-UR
Description Visible Light Emitting Diode

File Size 217.44K  /  2 Page

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Renesas Electronics Corporation

Part No. RJP1CS08DWT-80#X0
Description IGBT 1250V 200A Chip
Tech specs    

Official Product Page

    SANYO
Part No. KR-1200AAE
Description Nominal capacity: 1200mAh; nominal voltage: 1.2V; charging time: 14-16 Hrs; internal impendance: 12.0mOhm cadnica

File Size 352.55K  /  1 Page

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Renesas Electronics Corporation

Part No. RJP1CS08DWS-80#W0
Description IGBT 1250V 200A Sawn
Tech specs    

Official Product Page

    New Jersey Semi-Conductor Products, Inc.
Part No. 1N200AR
Description SI RECTIFIER, I(O)/I(F) S 100MA

File Size 73.99K  /  1 Page

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Renesas Electronics Corporation

Part No. RJP65S08DWA-80#W0
Description IGBT 650V 200A Wafer
Tech specs    

Official Product Page

    NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK444-200 BUK444-200A BUK444-200B BUK444
Description PowerMOS transistor 功率金属氧化物半导体晶体
Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 100uF; Voltage: 200V; Case Size: 16x20 mm; Packaging: Bulk
   PowerMOS transistor

File Size 76.65K  /  7 Page

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Renesas Electronics Corporation

Part No. RJP1CS08DWA-80#W0
Description IGBT 1250V 200A Wafer
Tech specs    

Official Product Page

    Nell Semiconductor Co., Ltd
Part No. NKD200A
Description Standard Recovery Diodes, 200 A

File Size 340.17K  /  4 Page

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Renesas Electronics Corporation

Part No. RJP65S08DWS-80#W0
Description IGBT 650V 200A Sawn
Tech specs    

Official Product Page

    HVU200A HVU200

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. HVU200A HVU200
Description Variable Capacitance Diode for Electronic Tuning

File Size 25.16K  /  5 Page

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    BUK545-200A BUK545-200B

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK545-200A BUK545-200B
Description PowerMOS transistor Logic level FET

File Size 52.02K  /  7 Page

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