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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CR3JM
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| OCR Text |
...er voltage Gate trigger current commutating capacitor V2 Tj=25C, VRRM applied Tj=25C, VDRM applied Tc=25C, ITM=3A, Instantaneous value Tj=25C, VD=6V, RL=6 Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, RL=6 CM=1800F, VCM=350V, ITM=240A, L=50H, VGK=-6V,... |
| Description |
LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
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| File Size |
63.11K /
4 Page |
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it Online |
Download Datasheet
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FAIRCHILD[Fairchild Semiconductor]
http://
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| Part No. |
FKN2L60 FKN2L60BU
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| OCR Text |
...tical-Rate of Rise of Off-State commutating Voltage (Note 3) I, III II VDRM = Rated, Tj = 125C, Exponential Rise II III TJ=125C, VD=1/2VDRM VD = 12V, ITM = 1A VD = 12V, IG = 1.2IGT VD=12V, RL=20 VD=12V, RL=20 Test Condition VDRM applied TC=... |
| Description |
Bi-Directional Triode Thyristor Planar Silicon
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| File Size |
125.08K /
7 Page |
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it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FKN2L80 FKN2L80BU FKN2L80FBU
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| OCR Text |
...tical-Rate of Rise of Off-State commutating Voltage (Note 3) I, III II VDRM = Rated, Tj = 125C, Exponential Rise 5 500 II III TJ=125C, VD=1/2VDRM VD = 12V, ITM = 1A VD = 12V, IG = 1.2IGT VD=12V, RL=20 VD=12V, RL=20 Test Condition VDRM appli... |
| Description |
Bi-Directional Triode Thyristor Planar Silicon
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| File Size |
153.10K /
7 Page |
View
it Online |
Download Datasheet |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
K08PN40 FKN08PN40
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| OCR Text |
...tical-Rate of Rise of Off-State commutating Voltage (di/dt=-0.7A/mS)
Commutation dv/dt Test
VDRM (V)
FKN08PN40
Test Condition
1. Junction Temperature TJ=125C 2. Rate of decay of on-state commutating current (di/dt)C 3. Peak off-sta... |
| Description |
TRIAC (Silicon Bidirectional Thyristor)
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| File Size |
228.84K /
7 Page |
View
it Online |
Download Datasheet |
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