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    2SJ363

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ363
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -30 20 -2 -4 -2 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) 3. Marking is "PY". ...
Description Silicon P-Channel MOS FET

File Size 36.88K  /  7 Page

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    2SJ386

HITACHI[Hitachi Semiconductor]
Part No. 2SJ386
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings -30 20 -3 -5 -3 0.9 150 -55 to +150 Unit V V A A A W C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate...
Description Silicon P-Channel MOS FET

File Size 37.10K  /  7 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -20 10 -10 -40 -10 20 150 -55 to +150 Unit V V A A A W C C 2 2SJ387(L), 2SJ387(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate ...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch Tch Tstg 1 Ratings -30 20 -0.2 -0.4 -0.2 150 150 -55 to +150 Unit V V A A A mW C C Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown volta...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ409 2SJ409L 2SJ409S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ409 2SJ409L 2SJ409S
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -100 20 -20 -80 -20 75 150 -55 to +150 Unit V V A A A W C C 2 2SJ409(L), 2SJ409(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate...
Description    Silicon P-Channel MOS FET
Power switching MOSFET

File Size 28.01K  /  5 Page

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    2SJ410

HITACHI[Hitachi Semiconductor]
Part No. 2SJ410
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -200 20 -6 -24 -6 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ410 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source break...
Description    Silicon P-Channel MOS FET

File Size 29.02K  /  6 Page

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    2SJ450

HITACHI[Hitachi Semiconductor]
Part No. 2SJ450
OCR Text ...mbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings -60 20 -1 -2 -1 1 150 -55 to +150 Unit V V A A A W C C Notes: 1. PW 100 s, duty cycle 10% 2. When using aluminium ceramic board (12.5 x 20 x 70 mm) 2 2SJ450 Ele...
Description    Silicon P-Channel MOS FET

File Size 43.82K  /  9 Page

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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...se Test Reverse Drain Current I DR (A) -0.4 -5 V V GS = 0 -0.3 -0.2 -0.1 0 -0.4 -0.8 -1.2 -1.6 -2.0 Source to Drain Voltage V SD (V) 5 2SJ451 Avalanche Test Circuit and Waveform Vin Monitor D.U.T. ...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text ...se Test Reverse Drain Current I DR (A) -0.16 -0.12 -5 V -0.08 V GS = 0 -0.04 0 -0.2 -0.4 -0.6 -0.8 -1.0 Source to Drain Voltage V SD (V) 5 2SJ452 Avalanche Test Circuit and Waveform Vin Monitor D.U.T....
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ...ymbol VDSS VGSS ID I D(pulse) I DR Pch Tch Tstg Note2 Note1 Ratings -30 20 -30 -120 -30 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to sou...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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