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  g 8 Datasheet PDF File

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    EIC7785-8 EIC7785-8NH

Excelics Semiconductor, Inc.
Part No. EIC7785-8 EIC7785-8NH
OCR Text ...CS (Ta = 25C) SYMBOL P1dB g1dB g PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 7.70-8.50gHz VDS = 10 V, IDSQ 2200mA gain at 1dB Compression f = 7.70-8.50gHz VDS = 10 V, IDSQ 2200mA gain Flatnes...
Description 7.70-8.50gHz 8-Watt Internally-Matched Power FET

File Size 157.30K  /  4 Page

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    CDNBS08-SLVU2.8-8

Bourns Electronic Solutions
Part No. CDNBS08-SLVU2.8-8
OCR Text ...l characteristics a b d e c f h g millimeters (inches) dimensions = ab c d e dimensions a 4.80 - 5.00 (0.189 - 0.196) b 3.80 - 4.00 (0.150 -...8 package with lead free 100 % sn plating on the lead frame. it weighs approximately 15 m g and has ...
Description CDNBS08-SLVU2.8-8 - Low Capacitance TVS Array

File Size 331.88K  /  4 Page

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    Analog Devices, Inc.
Part No. AD4360-8
OCR Text ...icatio n s subj ec t to ch an g e witho u t n o tice. no licen s e is g r an te d by implicati o n or ot herwi s e u n der a n y p a...8 v logic compatibility integer-n synt hesizer programmable output power level 3-wire seri al in...
Description Integrated Synthesizer and VCO

File Size 324.92K  /  24 Page

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    HV37T-8

Spectrum Microwave, Inc.
Part No. HV37T-8
OCR Text ...: z h m 0 0 3 o t 0 5 1 e g n a r y c n e u q e r f power output at 25 c (50 ohm load ) +10 dbm, min. power outpu...8 model hv37sm-82 notes: 1. specifications guaranteed over the operating temperature ...
Description Voltage Controlled Oscillator

File Size 614.98K  /  1 Page

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    EIC8596-8 EIC8596-8NH

Excelics Semiconductor, Inc.
http://
Part No. EIC8596-8 EIC8596-8NH
OCR Text ...CS (Ta = 25C) SYMBOL P1dB g1dB g PAE Id1dB IM3 IDSS VP RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 8.50-9.60gHz VDS = 10 V, IDSQ 2200mA gain at 1dB Compression f = 8.50-9.60gHz VDS = 10 V, IDSQ 2200mA gain Flatnes...
Description 8.50-9.60gHz 8-Watt Internally-Matched Power FET

File Size 179.83K  /  4 Page

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    Excelics Semiconductor
Part No. EIC8596-8
OCR Text ...q 2200ma 38.5 39.5 dbm g 1db gain at 1db compression f = 8.50-9.60ghz v ds = 10 v, i dsq 2200ma 6.5 7.5 db ? g gain flatness f = 8.50-9.60ghz v ds = 10 v, i dsq ...
Description Internally Matched Power FET

File Size 211.34K  /  4 Page

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    MOX-8-121006DE MOX-8-121006FE MOX-8-121006GE MOX-8-121006JE MOX-8-121006KE MOX-8-121006ME MOX-8-121006PE MOX-8-131006DE

Ohmite Mfg. Co.
Part No. MOX-8-121006DE MOX-8-121006FE MOX-8-121006gE MOX-8-121006JE MOX-8-121006KE MOX-8-121006ME MOX-8-121006PE MOX-8-131006DE MOX-8-131006FE MOX-8-131006gE MOX-8-131006JE MOX-8-131006KE MOX-8-131006ME MOX-8-131006PE MOX-8-161006DE MOX-8-161006FE MOX-8-161006gE MOX-8-161006JE MOX-8-161006KE MOX-8-161006ME MOX-8-161006PE MOX-5-161006DE MOX-5-161006FE MOX-5-161006gE MOX-5-161006JE MOX-5-161006KE MOX-5-161006ME MOX-5-161006PE MOX-1-121006ME MOX-2-121006ME MOX-3-121006ME MOX-4-121006ME MOX-5-121006ME MOX-1-131006ME MOX-2-131006ME MOX-3-131006ME MOX-4-131006ME MOX-5-131006ME MOX-1-161006ME MOX-2-161006ME MOX-3-161006ME MOX-4-161006ME MOX-3-121006DE MOX-3-121006FE MOX-3-121006gE MOX-3-121006JE MOX-3-121006KE MOX-3-121006PE MOX-2-131006DE MOX-2-121006PE MOX-2-131006KE MOX-2-121006JE MOX-2-131006gE MOX-2-131006JE MOX-2-121006DE MOX-2-121006KE MOX-2-121006FE MOX-2-121006gE MOX-2-131006FE MOX-3-131006DE MOX-3-131006FE MOX-3-131006gE MOX-3-131006JE MOX-3-131006KE MOX-3-131006PE MOX-4-131006PE MOX-4-131006KE MOX-4-131006JE MOX-4-121006gE MOX-4-121006KE MOX-4-121006FE MOX-4-121006PE MOX-4-131006gE MOX-4-121006DE MOX-4-121006JE MOX-4-131006DE MOX-4-131006FE MOX-5-121006PE MOX-5-121006KE MOX-5-121006JE
OCR Text ... t e m p e r at u r e / V o lta g e c o e f f i c i e n t s o f r e s i s ta n c e Resistor Series MOX-1 MOX-2 MOX-3 MOX-4 MOX-5 Temp. Coef...8 MIL-STD-202, Method 208F MIL-STD-202, Method 211A, Condition A or B Specification 0.25% 0.25% &gt;10,...
Description Precision Thick Film Axial Terminal High Voltage/High Resistance

File Size 142.15K  /  1 Page

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    Excelics Semiconductor
Part No. EIC7179-8
OCR Text ...q 2200ma 38.5 39.5 dbm g 1db gain at 1db compression f = 7.10-7.90ghz v ds = 10 v, i dsq 2200ma 7.5 8.5 db ? g gain flatness f = 7.10-7.90ghz v ds = 10 v, i dsq ...
Description Internally Matched Power FET

File Size 200.63K  /  4 Page

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    Mitsubishi Electric Corporation
Part No. CY25AAJ-8
OCR Text ...TER gATE COLLECTOR g VCES ............................................................................... 400V g ICM .............8 APPLICATION Strobe flasher for Camera MAXIMUM RATINgS Symbol VCES VgES VgEM ICM Tj Tstg ...
Description Integrated gate Bipolar Transistor (IgBT) Modules: 250V

File Size 37.57K  /  2 Page

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