|
|
![](images/bg04.gif) |
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
Part No. |
MGF0910A 0910A
|
Description |
MITSUBISHI SEMICONDUCTOR (gaas fet) L, S BAND power gaas fet L S BAND power gaas fet From old datasheet system
|
File Size |
25.38K /
3 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group] http://
|
Part No. |
BC856S Q62702-C2532 Q62702G0077
|
Description |
gaas MMIC (Dual band GSM/PCN power amplifier 35dBm / 34dBm output power at 3.5 V Two amplifiers in a single package) From old datasheet system PNP Silicon AF Transistor Array (For AF input stages and driver applications high current gain Low collector-emitter saturation voltage)
|
File Size |
41.38K /
6 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
MOTOROLA[Motorola, Inc]
|
Part No. |
MRFG35003MT1
|
Description |
MRFG35003MT1 3.5 GHz, 3 W, 12 V power fet gaas PHEMT The RF gaas Line GALLIUM ARSENIDE PHEMT RF power FIELD EFFECT TRANSISTOR
|
File Size |
331.39K /
8 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|
Part No. |
AGB3301 AGB3301S24Q1
|
Description |
50 ohm HGIH LINEARITY LOW NOISE WIDEBAND gain BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM power AMPLIFIER gain Block Amplifiers The AGB is one of a series of gaas MESfet amplifiers designed for use in applications requiring high linearity, low noise and low ...
|
File Size |
328.40K /
16 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|