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  ic-hbt Datasheet PDF File

For ic-hbt Found Datasheets File :: 639    Search Time::2.25ms    
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    RFMD[RF Micro Devices]
Part No. RF2607
OCR Text ...nd this Receive IF AGC Amp. The IC is manufactured on an advanced high frequency Silicon Bipolar process, and is packaged in a standard mini...HBT Si CMOS * Supports Dual Mode Operation CDMA+ 1 CDMA- 2 GND 3 FM+ 4 FM- 5 GND 6 IN SELECT ...
Description CDMA/FM RECEIVE AGC AMPLIFIER

File Size 109.94K  /  8 Page

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    RFMD[RF Micro Devices]
Part No. RF2870 RF2870PCBA
OCR Text ...MA cellular communications. The IC is manufactured on an advanced Silicon Germanium BiCMOS process and is assembled in a 3mmx3mm, 16pin, QFN...HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOS Package Style: QFN, 16-Pin, 3x3 ...
Description CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER

File Size 397.13K  /  14 Page

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    ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
Part No. RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022-008 PRFS-P5022-007 PRFS-P5022-006 PRFS-P5022-005
OCR Text ...r is a highperformance GaAs HBT IC designed for use in transmit applications in the 5.15-5.85 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN applications requiring high transmit linearity. T...
Description 5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...

File Size 72.73K  /  4 Page

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    ACS401

SEMTECH[Semtech Corporation]
Part No. ACS401
OCR Text IC ACS401 Main Features: * Enables up to four full-duplex serial transmission channels through a single fiber optic cable, providing eight...HBT CLK9 ERRC ERRL DR(1:3) DM(1:3) DP(1:4) PORB CKC General Description: The ACS401 is ...
Description Acapella Optical Modem IC

File Size 86.73K  /  8 Page

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    RFMD[RF Micro Devices]
Part No. RF2046 RF2046PCBA
OCR Text ... purpose, low cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50 gain block. Applications include IF and...
Description GENERAL PURPOSE AMPLIFIER

File Size 96.41K  /  6 Page

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    RFMD[RF Micro Devices]
N.A.
Part No. RF2360 RF2360411 RF2360412 RF2360PCBA
OCR Text ...st, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in an SOP-16 batwing package. I...HBT SiGe HBT 0.392 0.386 0.069 0.064 0.050 0.244 0.230 8 MAX 0 MIN 0.010 0.008 0.060 ...
Description LINEAR GENERAL PURPOSE AMPLIFIER

File Size 268.44K  /  14 Page

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    RF2376 RF2376PCBA

RFMD[RF Micro Devices]
Part No. RF2376 RF2376PCBA
OCR Text ...gain, and low noise figure. The IC is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process and is featured in an industry-standard miniature 6-lead plastic SOT package. 1.80 1.40 .50 .35 3.10 2....
Description CELLULAR TDMA/CDMA LINEAR VARIABLE GAIN AMPLIFIER

File Size 112.05K  /  8 Page

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    RF2667

RF Micro Devices
Part No. RF2667
OCR Text ...digital radio applications. The IC is manufactured on an advanced 15GHz FT Silicon Bipolar process, and is packaged in a standard miniature ...HBT SiGe HBT GaAs MESFET Si CMOS Features * Similar to RF9957with Higher I/Q Output Voltage ...
Description RECEIVE AGC AND DEMODULATOR

File Size 128.41K  /  10 Page

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    DRF1402F

List of Unclassifed Manufacturers
ETC[ETC]
Part No. DRF1402F
OCR Text ... RATINGS SYMBOL VCBO VCEO VEBO Ic PT TSTG TJ PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Total Power Dissipation Storage Temperature Operating Junction Temperature Ts = 60 ; note 1...
Description UHF POWER TRANSISTOR
From old datasheet system

File Size 320.93K  /  6 Page

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    RF2115LPCBA RF2115L RF2115

RF Micro Devices, Inc.
RFMD[RF Micro Devices]
Part No. RF2115LPCBA RF2115L RF2115
OCR Text ...2115L is a high power amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or...
Description HIGH POWER UHF AMPLIFIER 大功率高频放大器

File Size 100.89K  /  8 Page

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