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  id-12a Datasheet PDF File

For id-12a Found Datasheets File :: 3076    Search Time::1.218ms    
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    2SJ549 2SJ549L 2SJ549S

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. 2SJ549 2SJ549L 2SJ549S
OCR Text ...n peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings -60 20 -12 -48 -12 Unit V V A A A A mJ W C C Body-drain diode reverse ...12A, VGS = 0 I F = -12A, VGS = 0 diF/ dt = 50A/s Test Conditions I D = -10mA, VGS = 0 I G = 100A, VD...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开

File Size 54.89K  /  9 Page

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    2SK1187

SANKEN[Sanken electric]
Part No. 2SK1187
OCR Text ID ID (pulse) PD EAS Tch Tstg Ratings 100 20 12 48 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics ...12A, unclamped, See Figure 1 on Page 5. VDS -- ID Characteristics 12 10V 10 10 5.5V 8 12 VGS ...
Description MOSFET

File Size 33.28K  /  1 Page

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    2SK1189

Sanken electric
Part No. 2SK1189
OCR Text ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 15 60 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics S...12A, Figure Page VDS -- ID Characteristics 16 14 12 10 6V 10V 7V 16 14 VGS -- ID Characterist...
Description MOSFET

File Size 33.03K  /  1 Page

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    2SK1190

SANKEN[Sanken electric]
Part No. 2SK1190
OCR Text ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 22 88 (Tch 150C) (Ta = 25C) External dimensions 1 ...... FM20 Electrical Characteristics S...12A VGS = 10V, ID = 12A VDS = 25V, f = 1.0MHz, VGS = 0V I D = 12A, VDD = 30V, VGS = 10V, See Figure ...
Description MOSFET

File Size 33.10K  /  1 Page

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    CXA1391Q CXA1391R

SONY[Sony Corporation]
Part No. CXA1391Q CXA1391R
OCR Text ...to +150 V C CLP C MPX1 ID 44 43 42 41 40 39 38 37 36 35 34 33 C0 S2 IN 49 S1 IN 50 CLP C YO ...12A Capacitor connecting pin for VAP clamp (Clamp at CLP4) V-APCN: Vertical Aperture Compensa...
Description From old datasheet system
Processing IC for Complementary Color Mosaic CCD Camera

File Size 732.68K  /  33 Page

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    IRF7401 IRF7402 IRF7401TR

IRF[International Rectifier]
Part No. IRF7401 IRF7402 IRF7401TR
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, ...12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit IRF7401 Peak Diode Recovery...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)

File Size 117.75K  /  9 Page

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    IRF7403 IRF7403TRPBF

IRF[International Rectifier]
Part No. IRF7403 IRF7403TRPBF
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ,TSTG 10 Sec. Pulsed Drain Current, V...12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit IRF7403 Peak Diode Recovery...
Description Generation V Technology
Power MOSFET

File Size 112.84K  /  9 Page

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    IRF7404

IRF[International Rectifier]
Part No. IRF7404
OCR Text ...ute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG 10 Sec. Pulsed Drain Current, ...12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit 6 www.irf.com + D.U...
Description HEXFET Power MOSFET

File Size 159.41K  /  8 Page

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    IRFL014N

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFL014N
OCR Text ... Avalanche Rated D G S ID = 1.9A Description Fifth Generation HEXFET(R) MOSFETs from International Rectifier utilize advanced p...12a. Unclamped Inductive Test Circuit 20 0 V D D = 25 V 25 50 75 100 125 A 150 V (B...
Description 55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的,1.9AN沟道HEXFET功率MOSFET5V的,1.9A沟道的HEXFET功率马鞍山场效应管)
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)

File Size 140.28K  /  8 Page

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    ZXM64P03 ZXM64P035 ZXM64P035L3

ZETEX PLC
ZETEX[Zetex Semiconductors]
Part No. ZXM64P03 ZXM64P035 ZXM64P035L3
OCR Text ID = -12A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, l...
Description 35V P-CHANNEL ENHANCEMENT MODE MOSFET
P-channel MOSFET

File Size 95.68K  /  4 Page

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