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8D3S1 F2012 UCS1212 16NO7 H101M CM301 47362 259410
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  ma-pg m Datasheet PDF File

For ma-pg m Found Datasheets File :: 7101    Search Time::2.047ms    
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    AVF100 ASI10569

Advanced Semiconductor
Part No. AVF100 ASI10569
OCR Text ...BVEBO ICES hFE Cob PG C IC = 50 mA IC = 50 mA IE = 10 mA VE = 28 V TC = 25 C O NONETEST CONDITIONS RBE = 10 mINImUm TYPICAL mAXImUm 35 60 4.0 5 UNITS V V V mA --pF dB % VCE = 5.0 V VCB = 28 V VCC = 40 V IC = 1.0 A f...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.75K  /  1 Page

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    AVF150 ASI10570 ASAT10 ASAT20 ASI10517 ASI10519

ASI[Advanced Semiconductor]
Part No. AVF150 ASI10570 ASAT10 ASAT20 ASI10517 ASI10519
OCR Text ...CER BVEBO ICES hFE PG C IC = 10 mA IC = 15 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 mINImUm TYPICAL mAXImUm 65 65 3.5 12.5 UNITS V V V mA --dB % IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 43 V mHz IC = 1.0 A POUT = 15...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.12K  /  1 Page

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    AVF250 ASI10571

ASI[Advanced Semiconductor]
Part No. AVF250 ASI10571
OCR Text ...CER BVEBO ICES hFE PG C IC = 10 mA IC = 25 mA TC = 25 C O NONETEST CONDITIONS RBE = 10 mINImUm TYPICAL mAXImUm 65 65 3.5 25 UNITS V V V mA --dB % IE = 1.0 mA VCE = 50 V VCE = 5.0 V VCC = 50 V IC = 1.0 A POUT = 250 W f ...
Description NPN SILICON RF POWER TRANSISTOR

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    AVF400 ASI10574

ASI[Advanced Semiconductor]
Part No. AVF400 ASI10574
OCR Text ...CER BVEBO ICES hFE PG C IC = 15 mA IC = 50 mA IE = 1 mA VCE = 50 V TC = 25 C O NONETEST CONDITIONS RBE = 10 mINImUm TYPICAL mAXImUm 65 65 3.5 35 UNITS V V V mA --dB % VCE = 5.0 V VCC = 50 V IC = 1.0 A POUT = 400 W f...
Description NPN SILICON RF POWER TRANSISTOR

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    BLV32F

ASI[Advanced Semiconductor]
Part No. BLV32F
OCR Text ...ES BVEBO ICES hFE CC PG IC = 15 mA IE = 10 mA VCE = 32 V VCE = 25 V VCB = 25 V VCE = 25 V TC = 25 C O NONETEST CONDITIONS IC = 100 mA mINImUm TYPICAL mAXImUm 32 60 4.0 5.0 UNITS V V V mA --pF dB IC = 1.6 A f = 1.0 mHz P...
Description NPN SILICON RF POWER TRANSISTOR

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    IRKV105 IRKU105_16A IRKU105_04A IRKU105_04AS90 IRKU105_08A IRKU105_08AS90 IRKU105_12A IRKU105_12AS90 IRKU105_16AS90 IRKU

IRF[International Rectifier]
Part No. IRKV105 IRKU105_16A IRKU105_04A IRKU105_04AS90 IRKU105_08A IRKU105_08AS90 IRKU105_12A IRKU105_12AS90 IRKU105_16AS90 IRKU105-10 IRKU105-10A IRKV105-10 IRKU105-04 IRKU105-04A IRKV105-04 IRKV105-04A IRKU105-06 IRKU105-06A IRKV105-06 IRKV105-06A IRKU105-08 IRKU105-08A IRKV105-08 IRKV105-08A IRKU105-16 IRKU105-16A IRKV105-16 IRKV105-16A IRKU105-14 IRKU105-14A IRKV105-14 IRKV105-14A IRKU105-12 IRKU105-12A IRKV105-10A IRKV105-12 IRKV105-12A IRKV105/04A IRKV105/12A IRKV105/16A IRKV105/08A IRKU105/04A IRKU105/04AS90 IRKU105/08A IRKU105/08AS90 IRKU105/12A IRKU105/12AS90 IRKU105/16A IRKU105/16AS90
OCR Text ...800 1200 1600 IRRm IDRm 130C mA 20 On-state Conduction Parameters IT(AV) max. average on-state current IT(RmS) max. RmS on-state cu...PG(AV) max. average gate power max. peak gate current -VGm max. peak negative gate voltage max. gate...
Description 1200V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1200V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1400V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1400V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1600V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1600V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
800V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
800V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
1000V 105A Center-Tap Common Anode Phase Control Thyristor/Thyristor in a ADD-A-Pak (GEN I) package
1000V 105A Center-Tap Common Cathode Phase Control Thyristor/Thyristor in a ADD-A-Pak package
ADD-A-pak GEN V Power modules THYRISTOR/ THYRISTOR

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    TPV590

ASI[Advanced Semiconductor]
Part No. TPV590
OCR Text ... IC VCBO PDISS TJ T STG JC 300 mA 45 V 5.3 W @ TC = 25 OC -65 OC to +200 OC -65 OCto +200 OC 33 OC/W TC = 25 OC 1 = COLLECTOR 2 &amp; 4 = EmIT...PG VCE = 20 V ImD3 IC = 1.0mA IC = 10 mA IE = 1.0 mA VCE = 5 V VCB = 28 V VCE = 20 V TEST CONDITI...
Description NPN SILICON RF POWER TRANSISTOR

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    TVV030A ASI10661

ASI[Advanced Semiconductor]
Part No. TVV030A ASI10661
OCR Text ... NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCE = 5.0 V VCB = 30 V VCE = 28 V POUT = 30 W IC = 3.5 A IC = 1.0 A f = 1.0 mHz f = 225 mHz RBE = 10 mINImUm TYPICAL mAXImUm 60 60 30 4.0 10 120 150 7.5 -53 UNITS...
Description NPN SILICON RF POWER TRANSISTOR

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    TVV030 ASI10660 ASI10567 ASI10576 AVD400 AVF600

ASI[Advanced Semiconductor]
Part No. TVV030 ASI10660 ASI10567 ASI10576 AVD400 AVF600
OCR Text ... NONETEST CONDITIONS IC = 100 mA IC = 100 mA IC = 100 mA IE = 10 mA VCB = 50 V VCE = 5.0 V VCB = 30 V VCE = 28 V POUT = 30 W IC = 3.5 A IC = 1.0 A f = 1.0 mHz f = 225 mHz RBE = 10 mINImUm TYPICAL mAXImUm 60 60 30 4.0 5.0 10 120 150 7...
Description NPN SILICON RF POWER TRANSISTOR

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    TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662

Advanced Semiconductor, Inc.
ASI[Advanced Semiconductor]
Part No. TVV100 ASI1005 ASI10524 ASI10539 ASI10638 ASI10662
OCR Text ... BVCEO BVEBO hFE COB PG IC = 50 mA IC = 50 mA IC = 50 mA TC = 25 C O NONETEST CONDITIONS RBE = 15 mINImUm TYPICAL mAXImUm 65 60 33 3.5 UNITS V V V V IE = 5.0 mA VCE = 5.0 V VCB = 28 V VCE = 28 V POUT = 100 W IC = 2 X 1...
Description NPN Silicon RF Power Transistor(Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:16 A,Vcbo: 65 V,Vceo: 33 V,Vebo: 3.5 V))

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For ma-pg m Found Datasheets File :: 7101    Search Time::2.047ms    
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