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n- p-channel Datasheet PDF File

For n- p-channel Found Datasheets File :: 68553 Search Time::4.031ms
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				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...integral reverse --- --- -110 p-n junction diode. S --- --- -1.3 V TJ = 25C, IS = -16A, VGS = 0V --- 71 110 ns TJ = 25C, IF = -16A --- 170 250 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Note...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...howing the G integral reverse p-n junction diode. S TJ = 25C, IS = -16A, VGS = 0V TJ = 25C, IF = -16A di/dt = -100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -16A, di/dt...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRF530A
OCR Text	...tor Corporation IRF530A n-CHANNEL POWER MOSFET Electrical Characteristics (TC=25 C unless otherwise specified) Symbol BVDSS BV/...P l e T s .5 us et 08 . 10 . 12 . 14 . 16 . 18 . 20 . 22 . 1 5 oC 7 2 oC 5 1 -1 0 04 . 06 . ID...
Description	n-CHANNEL POWER MOSFET Advanced Power MOSFET
File Size	253.11K / 7 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I s s s s s s s s V DSS 100 V 100 V R DS(on) < 0.16 < 0.16 ...P tot Viso T s tg Tj March 1999 Parameter IRF530 Drain-source Voltage (V GS = 0) Drain- gate Voltage...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 ID 10 A s s TYPICA...P tot V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gat...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...integral reverse --- --- 60 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 9.0A, VGS = 0V --- 130 190 ns TJ = 25C, I F = 9.0A --- 650 970 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	n-channel TrenchMOSTM transistor IRF530N FEATURES * 'Trench' technology * Low on-state resistance * Fast switching * Low thermal resi...P D tp D = tp/T T 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 1E-06 1E-05 Pulse width, tp (...
Description	n-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 n-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7106 IRF7106TR
OCR Text	n-CHANNEL MOSFET 1 8 HEXFET (R) Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Description Fourth Generation HEXFE...
Description	20V Dual n- and P- Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss= -20V)
File Size	157.44K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D1
OCR Text	n-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction ...P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 ...
Description	MOSFET / SCHOTTKY DIODE
File Size	162.75K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7807D2
OCR Text	n-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output * Low Conduction ...P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 ...
Description	MOSFET / SCHOTTKY DIODE
File Size	131.40K / 8 Page	View it Online	Download Datasheet

For n- p-channel Found Datasheets File :: 68553 Search Time::4.031ms
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