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  n-channel power mos field effe Datasheet PDF File

For n-channel power mos field effe Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    NDT3055L

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. NDT3055L
Description n-channel Logic Level Enhancement Mode field effect TransistorA0V.1ΩN沟道逻辑增强型场效应管(漏电A, 漏源电压60V,导通电.1Ω 4 A, 60 V, 0.1 ohm, n-channel, Si, power, mosFET

File Size 226.33K  /  8 Page

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    NDP408 NDP408A NDP408AE NDP408B NDP408BE NDB408BE NDB408B NDB408A NDB408AE

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. NDP408 NDP408A NDP408AE NDP408B NDP408BE NDB408BE NDB408B NDB408A NDB408AE
Description n-channel Enhancement Mode field effect Transistor2A,80V.9ΩN沟道增强型mos场效应管(漏电流12A, 漏源电压80V,导通电.9Ω 11 A, 80 V, 0.2 ohm, n-channel, Si, power, mosFET, TO-263AB

File Size 71.87K  /  6 Page

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    PSMN004-60P PSMN004-60B PSMN004_60P_60B-01 PSMN004-60P127

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PSMN004-60P PSMN004-60B PSMN004_60P_60B-01 PSMN004-60P127
Description 75 A, 60 V, 0.0036 ohm, n-channel, Si, power, mosFET, TO-220AB PLASTIC, SC-46, 3 PIN
From old datasheet system
n-channel enhancement mode field-effect transistor

File Size 99.12K  /  13 Page

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    NDT452P NDT452

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. NDT452P NDT452
Description P-Channel Enhancement Mode field effect Transistor3A30V.18ΩP沟道增强型场效应管(漏电3A, 漏源电压-30V,导通电.18Ω 3 A, 30 V, 0.18 ohm, P-CHANNEL, Si, power, mosFET

File Size 225.95K  /  10 Page

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    MRF19030 MRF19030R3 MRF19030SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MRF19030 MRF19030R3 MRF19030SR3
Description RF power field effeCT TRANSISTORS L BAND, Si, n-channel, RF power, mosFET

File Size 386.08K  /  8 Page

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    MRF19060 MRF19060R3 MRF19060SR3

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF19060 MRF19060R3 MRF19060SR3
Description RF power field effeCT TRANSISTORS L BAND, Si, n-channel, RF power, mosFET

File Size 382.95K  /  8 Page

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    MRF21120

Motorola, Inc
Part No. MRF21120
Description MRF21120 2170 MHz, 120 W, 28 V Lateral n-channel RF power mosFETs
The RF Sub-Micron mosFET Line RF power field effect Trasistor n-channel Enhancement-Mode Lateral mosFET

File Size 385.56K  /  8 Page

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    Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
Part No. MRF9030MR1 MRF9030MBR1
Description 945 MHz, 30 W, 26 V Lateral N–Channel Broadband RF power mosFET
The RF Sub-Micron mosFET Line RF power field effeCT TRANSISTORS n-channel Enhancement-Mode Lateral mosFETs

File Size 617.23K  /  12 Page

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    MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3

Freescale Semiconductor, Inc
MOTOROLA
Part No. MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S19100HSR3
Description RF power field effect Transistors n-channel Enhancement-Mode Lateral mosFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral n-channel RF power mosFETs

File Size 420.58K  /  12 Page

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    MRF6S21100HR3 MRF6S21100HSR3

Freescale (Motorola)
Freescale Semiconductor, Inc
Part No. MRF6S21100HR3 MRF6S21100HSR3
Description 2170 MHz, 23 W Avg., 28 V, 2 x W–CDMA Lateral N–Channel RF power mosFET
RF power field effect Transistors n-channel Enhancement-Mode Lateral mosFETs

File Size 428.53K  /  12 Page

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