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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
CM400HA-28H
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| Description |
High Voltage insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE insulated type
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| File Size |
46.56K /
4 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Powerex, Inc.
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| Part No. |
CM600HA-28H
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| Description |
High Voltage insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE insulated type 大功率开关使用绝缘型
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| File Size |
48.90K /
4 Page |
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it Online |
Download Datasheet |
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ITT, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
POWEREX[Powerex Power Semiconductors]
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| Part No. |
CR8PM CR8PM-12
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| Description |
12.56 A, 600 V, SCR
MEDIUM POWER USE insulated type/ GLASS PASSIVATION type
MEDIUM POWER USE insulated type, GLASS PASSIVATION type
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| File Size |
65.91K /
5 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
QM75E3Y-H QM75E2Y-H
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| Description |
HIGH POWER SWITCHING USE insulated type 大功率开关使用绝缘型
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE insulated type
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| File Size |
88.87K /
6 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
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| Part No. |
QM30E3Y-2H QM30E2Y-2H QM30E2Y
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| Description |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE insulated type
MEDIUM POWER SWITCHING USE insulated type 中功率开关使用绝缘型
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| File Size |
89.16K /
6 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
PM200CSE060
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| Description |
FLAT-BASE type insulated insulated PACKAGE 平性基地型绝缘绝缘包装
FLAT-BASE type insulated PACKAGE
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| File Size |
119.64K /
6 Page |
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it Online |
Download Datasheet |
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| Part No. |
STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP1506
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| Description |
triac; triac type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting type:Through Hole; On-State Saturation Voltage:4V
triac; triac type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
triac; triac type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
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| File Size |
162.26K /
1 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
CM30MD3-12H
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| Description |
MEDIUM POWER SWITCHING USE FLAT-BASE type, insulated type 中功率开关使用平面性基地型，绝缘型
MEDIUM POWER SWITCHING USE FLAT-BASE type/ insulated type
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| File Size |
130.36K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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