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STANSON[Stanson Technology]
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Part No. |
ST2303
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OCR Text |
...URE
-30V/-2.6A, RDS(ON) = 130m-ohm
D G
1
1.Gate 2.Source
S
2
3.Drain
@VGS = -10V -30V/-2.0A, RDS(ON) = 180m-ohm @VGS = -4.5V S...7A
ST2303
ABSOULTE MAXIMUM RATINGS (Ta = 25J Unless otherwise noted ) Parameter Drain-Source V... |
Description |
P Channel Enchancement Mode MOSFET
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File Size |
76.53K /
6 Page |
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it Online |
Download Datasheet |
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SamHop Microelectronics
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Part No. |
STT622S
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OCR Text |
...30v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =4.2...7a 76 74 100 m ohm c f=1.0mhz c stt622s ver 1.0 www.samhop.com.tw jul,30,2010 2 nc q gs nc q gd 1.5... |
Description |
N-Channel Logic Level Enhancement Mode Field Effect Transistor
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File Size |
131.94K /
7 Page |
View
it Online |
Download Datasheet |
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SAMHOP[SamHop Microelectronics Corp.]
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Part No. |
STM8450A
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OCR Text |
... 4.6 895 168 110 3.0 35 62 V
m ohm m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-B...7A VGS = 0V, Is =-1.7A N-Ch P-Ch
Min Typ Max Unit
0.8 -0.77 1.2 -1.2
C
DRAIN-SOURCE DIODE ... |
Description |
Dual E nhancement Mode Field Effect Transistor (N and P Channel)
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File Size |
998.93K /
11 Page |
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it Online |
Download Datasheet |
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Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FDG6332C FDG6332CNL
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OCR Text |
...e.
0.8 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID =0.7A VGS = 4.5V 1.4
ID =0.4A
0.6
1.2
TA = 125oC
0.4
1
TA = 25oC
0.2
0.8
0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION T... |
Description |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET 20V N & P-Channel PowerTrench MOSFETs 20V N &P - Channel Power Trench MOSFET
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File Size |
90.23K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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