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  or3xxx 3c 3t field-programmabl Datasheet PDF File

For or3xxx 3c 3t field-programmabl Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    2SK3388

TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3388
Description Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

File Size 221.66K  /  6 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. HN1K05FU
Description Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

File Size 117.18K  /  5 Page

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    SSM3K03FE

TOSHIBA[Toshiba Semiconductor]
Part No. SSM3K03FE
Description 100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications

File Size 159.50K  /  5 Page

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    PMC-Sierra, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SK3387
Description Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型(二π- MOSV
From old datasheet system

File Size 204.73K  /  6 Page

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    ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10007
Description 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor

File Size 234.16K  /  6 Page

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    ERICSSON[Ericsson]
Part No. PTF10154
Description 85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor

File Size 255.49K  /  5 Page

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    PTF10021

Ericsson Microelectronics
Part No. PTF10021
Description 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor 30瓦,1.4-1.6 GHzGOLDMOS场效应晶体管
30 Watts/ 1.4-1.6 GHz GOLDMOS Field Effect Transistor
30 Watts, 1.4.6 GHz GOLDMOS Field Effect Transistor

File Size 277.83K  /  6 Page

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    NDH8320C

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. NDH8320C
Description Dual N & P-Channel Enhancement Mode Field Effect Transistor(双N沟道和P沟道增强型场效应N沟道:漏电流3A, 漏源电压20V,导通电.06Ω;P沟道:漏电流-2A, 漏源电压-20V,导通电.13Ω 3000 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Dual N & P-Channel Enhancement Mode Field Effect Transistor

File Size 72.79K  /  8 Page

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    BCD Semiconductor Manufacturing, Ltd.
Part No. AH276Z4-CG1 AH276Z4-AG1 AH276Z4-CE1 AH276Z4-BG1
Description MAGNETIC FIELD SENSOR-HALL EFFECT, -5-5mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4
MAGNETIC FIELD SENSOR-HALL EFFECT, -10-10mT, RECTANGULAR, THROUGH HOLE MOUNT ROHS COMPLIANT, TO-94, SIP-4,
MAGNETIC FIELD SENSOR-HALL EFFECT, -7-7mT, RECTANGULAR, THROUGH HOLE MOUNT GREEN, TO-94, SIP-4

File Size 299.91K  /  10 Page

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    TPC8401

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. TPC8401
Description 80 AMP MINI-ISO AUTOMOTIVE RELAY
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U-MOSII)
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type (U−MOSII)
TOSHIBA Field Effect Transistor Silicon N/ P Channel MOS Type (U−MOSII)

File Size 748.09K  /  11 Page

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