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SGS Thomson Microelectronics
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| Part No. |
AN1228
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| OCR Text |
...pe (pn) junction leakage due to recombination and generation of carriers in the july 2000 1/4 an1228 application note relate ldmos device parameters to rf performance john pritiskutch - brett hanson
an1228 - application note 2/4 quasi-neu... |
| Description |
RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE
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| File Size |
79.90K /
4 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN521
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| OCR Text |
...second slower and caused by the recombination of the minority carriers that cannot be extracted from the base of the pnp bipolar section which is already open. the length of this tail depends essentially on the lifetime of these carriers. a... |
| Description |
AN INTRODUCTION TO IGBTS
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| File Size |
123.84K /
10 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN662
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| OCR Text |
... of the igbt caused by the slow recombination of the minority carriers in its base. in soft-switching applications these losses can be reduced significantly, if the switching times required are longer than the minority carrier lifetime.
a... |
| Description |
IGBTS IN RESONANT CONVERTERS
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| File Size |
80.13K /
8 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN472
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| OCR Text |
...ontinues with a tail due to the recombination of minority carriers in the substrate - this is the turn-off phase of the pnp transistor with open base. this tail, responsible for major losses, is strongly related to the device construction t... |
| Description |
DRIVE CIRCUIT FOR INTEGRATION WITH IGBTS
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| File Size |
43.98K /
6 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN1491
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| OCR Text |
...linked to the minority carriers recombination its value and shape are strictly related to the holes mobility strictly related to the temperature reached by the die, i c and v ce . so depending on the temperature reached, it is possible to ... |
| Description |
IGBT BASICS (UPDATED VERSION OF AN521)
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| File Size |
115.61K /
16 Page |
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Vishay
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| Part No. |
AN801
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| OCR Text |
...g in the opposing clamp diodes, recombination will have to occur before the diode recovers and blocks voltage (figure 2). figure 3 illustrates the relationship of the diode reverse-recovery characteristics with gate drive impedance. the loa... |
| Description |
Designing with LITTLE FOOT? Power MOSFETs in Surface-Mount (SO-8) Packages
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| File Size |
93.95K /
8 Page |
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Electronic Theatre Controls, Inc.
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| Part No. |
MX16
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| OCR Text |
...hz, 20oc ? free of generation recombination noise ? excellent gm to c gs ratio o g m =28ms, c gs =4pf, 20oc ? 4-terminal ? n-channel ? available in die and other packages the bottom gate on this 4 terminal ... |
| Description |
LOW NOISE JFETS
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| File Size |
52.58K /
1 Page |
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