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MICROSEMI[Microsemi Corporation]
齐纳二极
Microsemi, Corp.
MICROSEMI CORP-LAWRENCE
MICROSEMI CORP-SCOTTSDALE
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| Part No. |
1N4560B 1N4559B 1N2804B 1N4561B JANTX1N2837 JANTX1N2837R JANTX1N2837A JANTX1N2837RA JANTX1N2837B JANTX1N2817 JANTX1N2817R JANTX1N2817A JANTX1N2817RA JANTX1N2817B JANTX1N2817RB JANTXV1N2817 JANTXV1N2817R JANTXV1N2817A JANTXV1N2817RA JANTXV1N2817B JANTXV1N2817RB JANTXV1N4561A JANTX1N2840 JANTX1N2840RA JANTX1N2840RB JANTXV1N2840 JANTXV1N2840R JANTXV1N2840A JANTXV1N2840RA JANTXV1N2840B JANTXV1N2840RB 1N2828R 1N2828RA 1N2828RB 1N4562RA 1N4564RB 1N2818 1N2818R 1N2818RA 1N2818RB 1N4559RA 1N4559RB 1N2808R 1N2808RA 1N2822R 1N2822RA 1N2822RB 1N2834 1N2834R 1N2834RA 1N2834RB 1N2809R 1N2809RA 1N2809RB 1N2819R 1N2819RA 1N2819RB 1N2810 1N2840R 1N2840RA 1N2840RB 1N2829R 1N2829RA 1N2824 1N2824R 1N2824RA 1N2824RB 1N4560R 1N4560RA 1N4560RB 1N2840 1N2837R 1N2837RA 1N2837RB 1N2827 1N2827R 1N2827RA 1N2827RB 1N2816RB 1N2816R 1N2816RA 1N2815R 1N2815RA 1N2815RB 1N2814R 1N2814RA 1N2814RB 1N2813R 1N2813RA 1N2813RB 1N2813 1N2811R 1N2820R 1N2820RA 1N2820RB 1N2821R 1N2826 1N2826R 1N2838R 1N2838RA 1N2845R 1N2845RA 1N2845RB 1N4561R 1N4561RA 1N4561RB 1N2825R 1N2825RA 1N2825RB 1N2838RB 1N2830R 1N2830RA 1N2830RB 1N2831 1N2831R 1N2831RA 1N2812R 1N2812RA 1N2812RB 1N2841R 1N2841RA 1N2841RB 1N2823RA 1N2823RB 1N2844RA 1
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| Description |
Zener Voltage Regulator Diode
50 Watt Zener Diodes
CAP 15PF 50V 2% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 9.1PF 50V /-0.25PF NP0(C0G) SMD-0603 TR-7-PA SN-NIBAR
CAP 10PF 50V /-0.25PF NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 10PF 25V 20% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 100PF 100V 5% NP0(C0G) SMD-0805 TR-7-PL SN-NIBAR
CAP 100PF 50V 5% NP0(C0G) SMD-0805 TR-13-PL SN-NIBAR
Single Wide Bandwidth High Output Drive Single Supply Op Amp 8-MSOP-PowerPAD 0 to 70
16-Bit Dual-Supply Bus Transceiver w/ Config. Xlation and 3-State Outputs 48-TVSOP -40 to 85
Ceramic Multilayer Capacitor; Capacitor Type:General Purpose; Capacitance:0.018uF; Capacitance Tolerance: 20%; Voltage Rating:100VDC; Capacitor Dielectric Material:Multilayer Ceramic; Termination:SMD RoHS Compliant: Yes
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 14 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-3
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 16 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
CAP 9.1PF 50V 1% NP0(C0G) SMD-0603 TR-7-PA SN-NIBAR 43 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 9.1 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 56 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 56 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
1A,200V,STD,SILASTIC,rect 7.5 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 160 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 110 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 110 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 120 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 110 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 100 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 100 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 4.7 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Single Wide-Bandwidth High-Output Drive Single-Supply Op Amp With Shutdown 8-SOIC 0 to 70 6.8 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 47 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 47 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 91 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 47 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 180 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 180 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 15 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 20 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 11 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 105 V, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) 11 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 3.9 V, 50 W, SILICON, UNIDIrectIONAL VOLTAGE REGULATOR DIODE, TO-204AD
Low Current Operation at 250?录A茂录?Low Reverse Leakage,Low Noise Zener Diode(250?录A氓路楼盲陆?莽?碌忙碌?茫??氓掳?氓??氓??忙录?莽?碌忙碌?茫??盲陆?氓?陋氓拢掳茫??茅陆?莽潞鲁盲潞?忙??莽庐隆)
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
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| File Size |
224.93K /
4 Page |
 View
it Online |
Download Datasheet
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Jewel Hill Electronic Co., Ltd.
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| Part No. |
GB12864ASGABNUA-V01 GB12864AHYAANDB-V01 GB12864AHYAANLA-V01 GB12864ANGBAMLB-V01 GB12864ANYBAMDA-V01 GB12864ANYBAMDB-V01 GB12864AHYBBMUA-V01 GB12864ANYABMUB-V01 GB12864ANYBBMUB-V01 GB12864ANYBBMUA-V01 GB12864ANYABMUA-V01 GB12864AHYBBMUB-V01 GB12864ASGABMUA-V01 GB12864AHYABMUA-V01 GB12864ASGABMUB-V01 GB12864ANGBBMUA-V01 GB12864AHYABMUB-V01 GB12864ANGABMUA-V01 GB12864ANGABMUB-V01 GB12864ANGBBMUB-V01 GB12864ANYAAMDB-V01 GB12864ANYABMDB-V01 GB12864ANYABMDA-V01 GB12864ANYAAMDA-V01 GB12864ANYAANUB-V01 GB12864ANGBAMUA-V01 GB12864ANGAAMLB-V01 GB12864ANGAAMUA-V01 GB12864ANGAANLA-V01 GB12864ANGAANUA-V01 GB12864ANYAANUA-V01 GB12864ANGABNUA-V01 GB12864AHYABNDB-V01 GB12864ANGBBNUA-V01 GB12864ANYABNLB-V01 GB12864ANYAAMUA-V01 GB12864ANGBAMUB-V01 GB12864ANYAAMUB-V01 GB12864ANGBBNUB-V01 GB12864AHYAAMDB-V01 GB12864ANYABNUA-V01 GB12864ANYABMLA-V01 GB12864ANGBAMDB-V01 GB12864ANGBBNDB-V01 GB12864ANGBBNDA-V01 GB12864ANGBBNLA-V01 GB12864ANGAAMDB-V01 GB12864ANYABMLB-V01 GB12864ANYAANDA-V01 GB12864ANYAAMLA-V01 GB12864ANYAAMLB-V01 GB12864ANYAANLB-V01 GB12864ANYAANLA-V01 GB12864AHYBBNUB-V01 GB12864ANGABNLA-V01 GB12864ANGAANDB-V01 GB12864ANYABNDB-V01 GB12864AHYABMLA-V01 GB12864ANYBAMUA-V01 GB12864AHYABMLB-V01
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| Description |
KNOB,1/4"SHAFT,METAL,RND,BLK, .5"DIAx.56"H,W/1 SET SCREW
KNOB,1/4"SHAFT,METAL,RND,SLVR, .5"DIAx.56"H,W/1 SET SCREW
LED,ORANGE,620NM,T-1 3/4, 1700MCD,1.7V,V/A12
LED,YELLOW,595NM,T-1 3/4, 2700MCD,1.7V,V/A12
ED,HI-EFF RED,635NM,T-1 3/4, 24MCD,2.6V,V/A36,(10)
DISPLAY,CA,GRN,3DIG,568NM 2.2VF@20MA,15mcd@20mA TYP
LED,RED/ORANGE 697/635NM, T-1 3/4,3/3MCD,1.7V,V/A30
LED,RED/GRN,WhtDIF,T1-3/4,697/ 565nm,1.7Vf,3/12mcd V/A 70
JACK,RCA,RA,PC MOUNT(BLACK)
TEST LEADS,BANANA,10PK
LED,RED,DIF,BLINK,3Hz,T1-3/4, 697nm,3-12vdc,2.8mcd@5vdc
SWITCH,TOG,FULL,SPDT SOLDER,125V/4A,1/2"MTNG
RELAY,GP,4PDT,LB4H-24DS-VP, 5A,24VDC,650 OHM COIL
LED,RED,WTRCLR,BlNK,2Hz T1-3/4 697nm,3-12v,9mcd
ED,YELLOW,588NM,1206, 6MCD,1.7V,V/A150,(10)
LED,ORANGE,620NM,T-1 3/4, 1800MCD,1.7V,V/A20
LED,ORANGE,620NM,T-1, 700MCD,1.7V,V/A40,(10)
ED,GREEN,573NM,1206, 12.5MCD,1.5V,V/A140,(10)
LED,RED,WTR CLR,T1-3/4,697nm 1.7Vf@20mA,12mcd V/A 20 (10)
LED,ORG/GRN,WhtDIF,T1-3/4, 635/565nm,1.7V,7.5/8mcd V/A 30
LED,GRN,GRN DIF,2EA,PCB,T1, 565nm 1.7Vf@20mA,15mcd V/A 50
LED,ORG,RED DIF,DUAL T1,PCB 635nm,1.7Vf,12mcd,V/A50,R/A
LED,RED,RED DIF,PCB,T1-3/4 697nm,1.7Vf,6.5mcd V/A 46 (10)
LED,YLW,YLW DIF,1EA,PCB,T1-3/4 585nm,1.7Vf@20mA,30mcd V/A 46
ED,RED,RED DIF,T1-3/4,697nm 1.7Vf@20mA,4.5mcd V/A 36 (10)
ED,ORG,ORG DIF,T1-3/4, 635nm,1.7Vf,24mcd V/A 36 (10)
SWITCH,TOG,FULL,SPST,ON-OFF, 6.0"WIRE,125V/6A,1/2"MTNG.
ED,HI-EFF RED,643NM,1206, 25MCD,1.5V,V/A150,(10)
LED,RED,RED DIFFUSED,T3-1/4, 660nm,1.5Vf 200mcd V/A32
LED,GRN,GRN DIF,T1-3/4, 565nm,1.7Vf,30mcd V/A36(10)
LED,RED/GRN,WHT DIF,635/565nm 1.7V,6mcd V/A116
ED,HI-EFF GREEN,565NM, T-1 3/4,150MCD,2.6V,V/A20,(10)
CRYSTAL,20.000MHZ,CSM-7,20PF
LED,RED,RED DIF,T2-1/2, 660nm,1.50Vf,100mcd V/A44
LED,RED/GRN,WHT DIF,T1,697/ 565nm,1.7Vf,2/5mcd V/A36
TESTER,LED TEST BOX,12 POS, 2-50MA,REQUIRES 9V BATTERY
ED,HI-EFF GREEN,565NM, T-1 3/4,25MCD,17V,V/A70,(10)
ED,HI-EFF-GREEN,565NM,T-1, 9.6MCD,1.7V,V/A112,(10)
ED,GREEN,565NM,T-1 3/4, 20MCD,1.7V,V/A68,(10)
LED,RED/GREEN,697/565NM, T-1 3/4,2/8MCD,1/7V,V/A30 规格液晶模块
LED,GRN,WTR CLR,T1-3/4,565nm 1.7Vf@20mA,150mcd V/A20 (10) 规格液晶模块
ED,YELLOW,588NM,1206, 6MCD,17V,V/A150,(10) 规格液晶模块
ED,GRN,GRN,DIF,rect 565nm, 1.7Vf@20mA,5.2mcd V/A100 (10) 规格液晶模块
LED,RED,WTR CLR,T1,697nm, 1.7Vf@20mA,8mcd@12mA V/A30(10) 规格液晶模块
LED,RED,RED DIF,T1,697nm 1.7Vf@20mA,4.5mcd V/A36 (10) 规格液晶模块
LED INDICATOR,CHROME BEZEL 2.0Vf@20mA,0.24"DIA 规格液晶模块
LED,GREEN,505NM, T-1 3/4,3400MCD,3.5V,V/A22 规格液晶模块
LED,GRN,GRN DIF,PCB,T1-3/4 565nm,1.7Vf,30mcd V/A46 (10) 规格液晶模块
LED,ALLNGAP RED,660NM,T-1, 300MCD,1.5V,V/A40 规格液晶模块
SPECIFICATIONS FOR LCD MODULE 规格液晶模块
SWITCH,PB,TACT,SPST, OFF-(ON)15VDC/20MA 规格液晶模块
LED,RED/RED DIF,DUAL T1(3mm) RIGHT ANGLE,RED DIFFUSED,PCB 规格液晶模块
LED,GRN/GRN DIF,2ea,PCB,T1.3mm 规格液晶模块
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| File Size |
257.04K /
23 Page |
View
it Online |
Download Datasheet |
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意法半导
EEPROM
STMicroelectronics N.V.
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| Part No. |
M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
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| Description |
16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM
Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
CRYSTAL 9.84375MHZ 10PF SMD
UHF power transistor
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD
MMIC variable gain amplifier
AB 3C 3#12 SKT RECP
Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
XTL, OSC, 50.000 MHZ, 100PPM
Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
CONNECTOR ACCESSORY
PNP/PNP matched double transistors
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP
AB 17C 17#16 PIN RECP
45 V, 100 mA NPN general-purpose transistors
NPN/PNP general purpose transistor - Description: Matched Pair
IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015
CRYSTAL 4.897MHZ 20PF SMD
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
POT 200 OHM 3/4 rect CERM MT
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 600 V
Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes
CRYSTAL 6.7458MHZ 20PF SMD
Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes
RES ARRAY 24 OHM 8TRM 4RES SMD
SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box
NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300
High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V
Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V
Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V
Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V
NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V
NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V
Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V
Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V
Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V
AB 4C 4#12 PIN PLUG
Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz
Silicon PIN diode
NPN 14 GHz wideband transistor
PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V
HDWR PLATE SER 3 FRNT MNT BLK
OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD
Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V
Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V
Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V
16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS
HDWR SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
rectIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
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