rg-400 u pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7263 Search Time::1.39ms
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				IRF[International Rectifier]
Part No.	IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text	...-30V 68 --- ID = -11A ns 15 --- RG = 18 29 --- RD = 2.5, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 570 --- VGS = 0V 36...400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110)...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text	...DD = -28V --- ID = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 --- VGS = 0V 170 --- p...400 12 300 8 200 C rss 4 100 0 1 10 100 A 0 0 5 10 FO R TE S T CIR ...
Description	-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z24N IRF9Z24NPBF
OCR Text	...D = -28V --- I D = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...400 12 300 8 200 C rs s 4 100 0 1 10 100 A 0 0 5 10 FO R TEST C IR ...
Description	-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text	...VDD = -30V --- ID = -18A ns --- RG = 12 --- RD = 1.5, See Fig. 10 Between lead, nH --- and center of die contact --- VGS = 0V --- pF VDS = ...400) RE F . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110)...
Description	-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text	... Starting TJ = 25C, L = 3.6mH RG = 25, I AS = -10A. (See Figure 12) TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material )....400 C rs s 200 4 0 1 10 100 A 0 0 10 20 FO R TEST C IR C u IT SEE F IGu R E 1 3 ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF9Z34N IRF9Z34NPBF
OCR Text	...DD = -28V --- I D = -10A ns --- RG = 13 --- RD = 2.6, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die c...400 C rs s 200 4 0 1 10 100 A 0 0 10 20 FO R TEST C IR C u IT SEE F IGu R E 1 3 ...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ449 2SJ449JM
OCR Text	...rain ** Starting Tch = 25 C, RG = 25 , VGS = -20 V 0 Gate Body Diode Source Document No. D10030EJ1V0DS00 Date Published May ...400 DYNAMIC INPuT/OuTPuT CHARACTERISTICS -20 ID = -6 A VDS - Drain to Source Voltage - V -300 VDD...
Description	Pch vertical DMOS FET MP-45F SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE
File Size	116.80K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...5 A VGS(on) = -10 V VDD = -30 V RG = 10 ID = -30 A VDD = -48 V VGS = -10 V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s 4120 1750 580 40 220 600 380 140 12 46 0.8 160 400 1.5 -1.0 12 MIN. TYP. 24 38 -1.5 24 -10 m10 MAX. 30 56 -2.0...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDuSTRIAL uSE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 3.0 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.17 0.24 5.0 400 220 75 10 40 75 65 -1.1 65 Max -- -- -10 10 -2.0 0...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet

For rg-400 u Found Datasheets File :: 7263 Search Time::1.39ms
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