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  to262-7 Datasheet PDF File

For to262-7 Found Datasheets File :: 322    Search Time::2.11ms    
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    IPI12CN10NG IPB12CN10NG IPD12CN10NG IPP12CN10N IPP12CN10NG

Infineon Technologies AG
Part No. IPI12CN10NG IPB12CN10NG IPD12CN10NG IPP12CN10N IPP12CN10NG
OCR Text ...10N PG-TO252-3 12CN10N PG-TO262-3 12CN10N PG-TO220-3 12CN10N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 250 8 Typ. ...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor
OPTIMOS⑶2 POWER-TRANSISTOR

File Size 624.51K  /  12 Page

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    INFINEON[Infineon Technologies AG]
Part No. IPB08CNE8NG IPI08CNE8NG IPP08CNE8N IPP08CNE8NG
OCR Text ...ing PG-TO263-3 08CNE8N PG-TO262-3 08CNE8N PG-TO220-3 08CNE8N Maximum ratings, at T j=25 C, unless otherwise specified Parameter ...7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. ...
Description OptiMOS?2 Power-Transistor
OptiMOS㈢2 Power-Transistor

File Size 459.07K  /  11 Page

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    SPI21N10 SPP21N10 SPB21N10

INFINEON[Infineon Technologies AG]
Part No. SPI21N10 SPP21N10 SPB21N10
OCR Text ... Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS R DS(on) ID 100 80 21 P-TO220-3-1 V m A Type ...7 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Pa...
Description SIPMOS Power-Transistor

File Size 480.70K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPI80N08S2-07R
OCR Text TO262 -3-1 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated * Integrated gate resistance for easy...7.3 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=...
Description Low Voltage MOSFETs - TO262; 80 A; 75V; NL; 7.3 mOhm; integrated Rg
OptiMOS Power-Transistor

File Size 324.92K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP11N60C3 Q67040-S4395 Q67040-S4396 Q67042-S4403 SPB11N60C3 SPBI11N60C3 SPI11N60C3
OCR Text ...=150 C operating temperature P-TO262-3-1 C OLMOS O Power Semiconductors Product Summary VDS @ Tjmax RDS(on) ID P-TO263-3-2 650 0...7 Unit A Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, V...
Description Cool MOS Power Transistor 酷MOS功率晶体

File Size 191.67K  /  14 Page

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    SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03

INFINEON[Infineon Technologies AG]
Part No. SPB100N03S2L-03 SPP100N03S2L-03 SPI100N03S2L-03
OCR Text ...RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 2.7 100 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * Excellent Gate Charge x R DS(on) product (FOM) * Superior thermal resistance * 175C operating temperatu...
Description 100 A, 30 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.7mOhm, 100 A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3mOhm, 100A, LL

File Size 416.96K  /  8 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. SPP47N10 SPB47N10 SPI47N10
OCR Text ... Avalanche rated dv/dt rated P-TO262-3-1 P-TO263-3-2 Product Summary VDS RDS(on) ID 100 33 47 P-TO220-3-1 V m A Type SPP4...7 Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate p...
Description SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=33mOhm, 47A, NL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=33mOhm, 47A, NL

File Size 509.17K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP80N03S2-03 SPB80N03S2-03 SPI80N03S2-03
OCR Text ...Superior thermal resistance P- TO262 -3-1 * 175C operating temperature * Avalanche rated * dv/dt rated Type SPP80N03S2-03 SPB80N03S2-...7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp ...
Description Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.1 mOhm, 80A, NL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.4 mOhm, 80A, NL
OptiMOS Power-Transistor 的OptiMOS功率晶体
80 A, 30 V, 0.0034 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN

File Size 418.01K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. SPP80N03S2L-03 SPB80N03S2L-03 SPI80N03S2L-03
OCR Text ...RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 30 2.8 80 P- TO220 -3-1 V m A * Enhancement mode * Logic Level * Excellen...7 51 148 135 ns VDD =15V, VGS =10V, ID =40A, RG =1.1 - 19 57 166 2.9 26 86 220 - nC ...
Description 80 A, 30 V, 0.0038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220, 3 PIN
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 2.8mOhm, 80A, LL
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 3,1 mOhm

File Size 415.20K  /  8 Page

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