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				International Rectifier
Part No.	IRGPS40B120UDP
OCR Text	...onditions qg total gate charge (turn-on) ??? 340 510 i c = 40a qge gate - emitter charge (turn-on) ??? 40 60 nc v cc = 600v q gc gate - collector charge (turn-on) ??? 165 248 v ge = 15v e on turn-on switching loss ??? 1400 1750 j i c = ...
Description	Insulated Gate Bipolar Transistor
File Size	348.34K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4ZH71KD
OCR Text	...nditions q g total gate charge (turn-on) 380 570 i c = 42a q ge gate - emitter charge (turn-on) 48 72 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 120 180 v ge = 15v t d(on) turn-on delay time 80 t r rise time 45...
Description	1200V Copack IGBT in a SMD-10 package
File Size	241.49K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRG4ZC71KD
OCR Text	...nditions q g total gate charge (turn-on) 343 515 i c = 60a q ge gate - emitter charge (turn-on) 44 66 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 161 242 v ge = 15v t d(on) turn-on delay time 140 t r rise time 6...
Description	600V Copack IGBT in a SMD-10 package
File Size	231.99K / 10 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	AON7458
OCR Text	... capacitance dynamic parameters turn-on rise time diode forward voltage turn-off delaytime v gs =10v, v ds =125v, i d =1.5a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge turn-on delaytime gate source charge drain-s...
Description	250V,5A N-Channel MOSFET
File Size	521.59K / 6 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRFB31N20D IRFS31N20DTRL
OCR Text	... 33 49 v gs = 10v, ? t d(on) turn-on delay time CCC 16 CCC v dd = 100v t r rise time CCC 38 CCC i d = 18a t d(off) turn-off delay time CCC 26 CCC r g = 2.5 w t f fall time CCC 10 CCC r d = 5.4 w ? c iss input capacitance CCC 2370 CC...
Description	Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A) TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 31A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 200伏五（巴西）直\|1A条（丁）\|63AB Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
File Size	192.77K / 11 Page	View it Online	Download Datasheet

				IBM Microeletronics
Part No.	IBM42M10SCYAA10 IBM42M10LCYAA20
OCR Text	...ing modified by the transmitter turn-on/turn-off delays. if the glm does not receive a responding optical signal during the decode 1 time period, it continues to emit this pulse every 10.1 sec. when the fiber path is restored as shown in ...
Description	1063 MB/S Gigabit Link Module(1063 MB/S 吉位连接模块（高性能集成光纤收发器）)
File Size	330.93K / 31 Page	View it Online	Download Datasheet

				Allegro Micro Systems
Part No.	A4940
OCR Text	...50 500 750 ma gate output drive turn-on time t r c load = 1 nf, 20% to 80% points ? 35 ? ns turn-off time t f c load = 1 nf, 80% to 20% points ? 20 ? ns pull-up on resistance r ds(on)up t j = 25c, i ghx = ?150 ma 8 11 16 t j = 150c,...
Description	Automotive Full Bridge MOSFET Driver
File Size	472.10K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	GP30B120KD-E
OCR Text	...ons fig. q g total gate charge (turn-on) 169 254 i c = 25a 23 q ge g ate - em itter charge (turn-on) 19 29 nc v cc =600v ct 1 q gc gate - collector charge (turn-on) 82 123 v ge = 15v e on turn-o n switching loss 1066 1250 i c = 25a, v c...
Description	Search --To IRGP30B120KD-E
File Size	171.17K / 12 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	GP30B120KD-EP
OCR Text	...ons fig. q g total gate charge (turn-on) 169 254 i c = 25a 23 q ge gate - emitter charge (turn-on) 19 29 nc v cc =600v ct 1 q gc gate - collector charge (turn-on) 82 123 v ge = 15v e on turn-on switching loss 1066 1250 i c = 25a, v cc ...
Description	Search --To IRGP30B120KD-EP
File Size	203.70K / 12 Page	View it Online	Download Datasheet

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