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For unit source Found Datasheets File :: 102882 Search Time::7.359ms
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				SGS Thomson Microelectronics
Part No.	STB7NB40
OCR Text	... ratings symbol parameter value unit stb7nb40 v ds drain-source voltage (v gs =0) 400 v v dgr drain- gate voltage (r gs =20k w ) 400 v v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 o c7a i d drain current (continu...
Description	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
File Size	60.70K / 6 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB]
Part No.	IRF460
OCR Text	...21 0.27 0.31 Min. 500 Typ. Max. unit V 25 250 100 4 A nA V A 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. ...source Charge Gate - Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall T...
Description	N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
File Size	16.77K / 2 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMicroelectronics
Part No.	IRF530FI IRF530 3003
OCR Text	.../s, VDD V(BR)DSS, Tj TJMAX unit V V V 11 7.8 64 40 0.27 2000 A A A W W/ C V o o o C C 1/6 (*) Pulse width limited by safe operat...source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 100 1 10 100 Typ. Max. unit V A...
Description	From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
File Size	46.69K / 6 Page	View it Online	Download Datasheet

				SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	IRF530FP 5758
OCR Text	... 64 35 0.23 2000 -65 to 175 175 unit V V V A A A W W/ o C V o C o C (*) Pulse width limited by safe operating area March 1998 1/5 ...source Breakdown Voltage Test Conditions I D = 250 A VGS = 0 Min. 600 1 10 100 Typ. Max. unit V A A...
Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR From old datasheet system
File Size	76.48K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	IRF530N
OCR Text	...AX. 100 100 20 17 12 68 79 175 unit V V V A A A W C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Ma...source breakdown voltage Gate threshold voltage Drain-source on-state resistance Forward transconduc...
Description	N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体 N-channel TrenchMOS TM transistor
File Size	95.87K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQB8N90CTM
OCR Text	...cs symbol parameter fqb8n90ctm unit v dss drain-source voltage 900 v i d drain current - continuous (t c = 25c) 6.3 a - continuous (t c = 100c) 3.8 a i dm drain current - pulsed (note 1) 25 a v gss gate-source voltage 30 v e as singl...
Description	N-Channel QFETMOSFET
File Size	420.81K / 9 Page	View it Online	Download Datasheet

				Taiwan Semiconductor
Part No.	TSM3N90CI TSM3N90CP
OCR Text	...d) parameter symbol limit unit ipak/dpak ito-220 to-220 drain-source voltage v ds 900 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 2.5 a tc = 100oc 1.6 a pulsed drain current * i...
Description	Discrete Devices-MOSFET-Single N-Channel
File Size	547.79K / 12 Page	View it Online	Download Datasheet

				TT electronics Semelab Limited International Rectifier SEME-LAB[Seme LAB]
Part No.	IRF9240 IRF9240-SMD
OCR Text	...2.5 Typ. 30 15 18 12 nH nH Max. unit 1.0 C/W C/W C/W C unit A V ns ns 1300 450 250 90 nC pF 0.5 Min. -200 -2 Typ. Max. -4 -100 100 -250 -100...source - DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Continuous source Current (Body Diod...
Description	CAP CER 250VAC 150PF X7R 1808 P-CHANNEL POWER MOSFET
File Size	25.33K / 2 Page	View it Online	Download Datasheet

				Taiwan Semiconductor
Part No.	TSM3N80CI TSM3N80CP TSM3N80CZ
OCR Text	...d) parameter symbol limit unit ipak/dpak ito-220 to-220 drain-source voltage v ds 800 v gate-source voltage v gs 30 v continuous drain current tc = 25oc i d 3 a tc = 100oc 1.83 a pulsed drain current * i ...
Description	Discrete Devices-MOSFET-Single N-Channel
File Size	558.04K / 12 Page	View it Online	Download Datasheet

For unit source Found Datasheets File :: 102882 Search Time::7.359ms
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