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v-fet Datasheet PDF File

For v-fet Found Datasheets File :: 20855 Search Time::1.563ms
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				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	...torage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating -60 25 100 20 325,9 50 150 -55 ~ +150 Unit V A A V mJ W C C...FET -60V 0,06 2SJ475-01 FAP-III Series Drain-Source On-State Resistance vs. Tch RDS(on) = ...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	... -30 50 150 -55 to +150 Unit V V A A A W C C 2 2SJ479(L), 2SJ479(S) Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltege drain current Gate to source leak...
Description	Power switching MOSFET Silicon P Channel DV-L MOS FET High Speed Power Switching Silicon P Channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ483
OCR Text	...DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SJ483 Absolute Maximum Ratings (Ta = 25C) I...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	42.73K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ484
OCR Text	...tance R DS(on) = 0.18 typ. (at V GS = -10V, ID = -1A) * Low drive current * High speed switching * 4V gate drive devices. Outline UPAK 2 3 1 4 D G 1. Gate 2. Drain 3. Source 4. Drain S 2SJ484 Absolute Maximum Ratings ...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	42.55K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ486
OCR Text	...stance R DS(on) = 0.5 typ. (at V GS = -4V, ID = -100 mA) * 2.5V gate drive devices. * Small package (MPAK). Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SJ486 Absolute Maximum Ratings (Ta = 25C) Item Drain to...
Description	RELAY-.5AMP-DC-6V/DIODE RoHS Compliant: Yes 硅P通道MOS FET的低FrequencyPower开 Silicon P Channel MOS FET Low FrequencyPower Switching Silicon P-Channel MOS FET
File Size	40.30K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	...(on)1 = 100 m (MAX.) (VGS = -10 V, ID = -10 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -10 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) G...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	...(on)1 = 100 m (MAX.) (VGS = -10 V, ID = -8 A) RDS(on)2 = 185 m (MAX.) (VGS = -4 V, ID = -8 A) * Low Ciss: Ciss = 1210 pF (TYP.) * Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage (VGS = 0 V) Gat...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...DS(on)1 = 50 m: Max. (VGS = -10 V, ID = -10 A) RDS(on)2 = 88 m: Max. (VGS = -4 V, ID = -10 A) * Low Ciss Ciss = 2360 pF Typ. 0.70.1 2.54 ...FET features and application to switching power supply Application circuits using Power MOS FET Safe...
Description	From old datasheet system SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	... RDS(on)2 = 56 m MAX. (VGS = -4 V, ID = -15 A) * Low Ciss Ciss = 4120 pF TYP. * Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (...FET features and application to switching power supply Application circuits using Power MOS FET Safe...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	...S(on) = 0.12 typ. (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SJ496 Absolute Maximum Ratings (Ta = 25C) Item D...
Description	Silicon P-Channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

For v-fet Found Datasheets File :: 20855 Search Time::1.563ms
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