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00006 C106MS CMDA44 2SC410 PS104C 80000 CMM14 C2712
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    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ... [V] Figure 3. On-Resistance variation vs. Drain Current and Gate Voltage 10 2 Figure 4. Body Diode Forward Voltage variation vs. Source Current and Temperatue 0.4 0.3 VGS = 10V IDR , Reverse Drain Current [A] RDS(ON)...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

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    FDS2570

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS2570
OCR Text ...ics. Figure 2. On-Resistance variation with Drain Current and Gate Voltage. 0.2 2.6 2.2 1.8 ID = 4.3 A VGS = 10 V ID = 2.2 A 0.16 TA = 125 C o 1.4 1 0.6 0.2 -50 -25 0 25 50 75 100 o 0.12 0.08 TA = 25 C o 125 ...
Description    150V N-Channel PowerTrench MOSFET

File Size 230.92K  /  8 Page

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    FQA34N25

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQA34N25
OCR Text ... [V] Figure 3. On-Resistance variation vs Drain Current and Gate Voltage. Figure 4. Body Diode Forward Voltage variation with Source Current and Temperature. 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1...
Description 250V N-Channel MOSFET 34 A, 250 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 688.01K  /  8 Page

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    FQAF34N25

FAIRCHILD[Fairchild Semiconductor]
Part No. FQAF34N25
OCR Text ... [V] Figure 3. On-Resistance variation vs Drain Current and Gate Voltage. Figure 4. Body Diode Forward Voltage variation with Source Current and Temperature. 5000 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 1...
Description 250V N-Channel MOSFET

File Size 684.75K  /  8 Page

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    FQT4N25

Fairchild Semiconductor, Corp.
Part No. FQT4N25
OCR Text ... [V] Figure 3. On-Resistance variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage variation vs. Source Current and Temperature 350 300 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ...
Description 250V N-Channel MOSFET 0.83 A, 250 V, 1.75 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 652.28K  /  8 Page

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    SamHop Microelectronics
Part No. STD616S STU616S
OCR Text ...e ( c ) figure 4. on-resistance variation with drain current and temperature tj, junction temperature ( c ) figure 5. gate threshold variation with temperature tj, junction temperature ( c ) figure 6. breakdown voltage variation with temper...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 140.93K  /  8 Page

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    SamHop Microelectronics...
Part No. SDUD05N04
OCR Text ... 150 figure 5. gate threshold variation with temperature v ds =v gs i d =250ua figure 6. breakdown voltage variation with temperature bv dss , normalized drain-source breakdown voltage tj, junction temperature ( c) -50 -25 0 25 50 75 10...
Description Super high dense cell design for low RDS(ON).

File Size 158.17K  /  11 Page

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    RF5602WB33PCK-410 RF5602HWLPCK-410 RF5602SR RF5602TR7 RF5602WL33PCK-410 RF5602WM50PCK-410 RF5602HWMPCK-410 RF5602WM33PCK

RF Micro Devices
Part No. RF5602WB33PCK-410 RF5602HWLPCK-410 RF5602SR RF5602TR7 RF5602WL33PCK-410 RF5602WM50PCK-410 RF5602HWMPCK-410 RF5602WM33PCK-410 RF5602WB50PCK-410 RF5602WL50PCK-410
OCR Text ...er v reg and fre- quency) gain variation over temperature -2 2 db -40c to +85c power detector +10 +29 dbm power detector usable range input impedance 50 ? input matched to 50 ? output p1db 33 dbm at nominal conditions with cw signal and v ...
Description 3.0V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER

File Size 2,309.50K  /  27 Page

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