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    IRFB9N65 IRFB9N65A

International Rectifier
Part No. IRFB9N65 IRFB9N65A
OCR Text ... Linear Derating Factor Gate-to-source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 8.5 5.4 21 167 1.3 30 2.8 -55 to + 1...
Description Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 107.63K  /  8 Page

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    SamHop Microelectronics
Part No. SP3900
OCR Text ...5 30 c/w v v 20 t a =25 c gate-source voltage drain-source voltage thermal characteristics product summary v dss i d r ds(on) (m ) max 30v 4.5a 74 @ vgs=4.5v 42 @ vgs=10v features super high dense cell design for low r ds(on) . r...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 108.83K  /  7 Page

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    IRFB9N60 IRFB9N60APBF

International Rectifier
Part No. IRFB9N60 IRFB9N60APBF
OCR Text ... Linear Derating Factor Gate-to-source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mou...
Description Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 142.12K  /  8 Page

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    IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D

International Rectifier
Part No. IRFB23N15 IRFSL23N15D IRFB23N15DPBF IRFS23N15D
OCR Text ... Linear Derating Factor Gate-to-source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 23 17 92 3.8 136 0.9 30 4.1 -55 to +...
Description Power MOSFET(Vdss=150V/ Rds(on)max=0.090ohm/ Id=23A)
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 148.91K  /  11 Page

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    IRFB11N50 IRFB11N50APBF

International Rectifier
Part No. IRFB11N50 IRFB11N50APBF
OCR Text ... Linear Derating Factor Gate-to-source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 11 7.0 44 170 1.3 30 6.9 -55 to + 15...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.52ohm/ Id=11A)
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 105.49K  /  8 Page

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    FreesCale
Part No. MC4805
OCR Text ...sed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-so...
Description Dual P-Channel 30-V (D-S) MOSFET

File Size 335.01K  /  5 Page

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    BTS117

INFINEON TECHNOLOGIES AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BTS117
OCR Text ...possible Product Summary Drain source voltage On-state resistance Current limit Nominal load current Clamping energy VDS RDS(on) ID(lim) ID(ISO) EAS 60 7 3.5 V A A 100 m 1000 mJ Application * All kinds of resistive, in...
Description 10 A BUF OR INV BASED PRPHL DRVR, PSFM3
Smart Lowside Power Switch (Logic Level Input Input Protection ESD Thermal Shutdown Overload protection)
From old datasheet system

File Size 137.31K  /  10 Page

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    BTS118D

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BTS118D
OCR Text ...2-3-11 Product Summary Drain source voltage On-state resistance Nominal load current Clamping energy VDS RDS(on) ID(Nom) EAS 42 100 2.4 2 V mW A J Application * All kinds of resistive, inductive and capacitive loads in switching or l...
Description Smart Lowside Power Switch

File Size 331.57K  /  10 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text ...Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 k Gate-source voltage Continuous drain current, TC = 25 C ISO drain current TC = 85 C, VGS = 10 V, VDS = 0.5 V Pulsed drain current, Short circuit current, Symbol V...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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