.750-.875 pdf Datasheet P9 Full Text Search --- IC-ON-LINE


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.750-.875 Datasheet PDF File

For .750-.875 Found Datasheets File :: 2368 Search Time::5.25ms
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				COMCHIP[Comchip Technology]
Part No.	CEFA102 CEFA105 CEFA101 CEFA103 CEFA104
OCR Text	...rminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight:0.063 gram ...875 25 1.0 1.1 35 1.25 50 A V nS uA 5.0 250 25 -55 to +150 -55 to +150 JL C/W C C ...
Description	SMD Efficient Fast Recovery Rectifier
File Size	54.79K / 2 Page	View it Online	Download Datasheet

				MICREL[Micrel Semiconductor]
Part No.	SY10H841 SY10H841ZC SY10H841ZCTR
OCR Text	...3.650 Max. 175 -- 4.190 3.520 3.750 TA = +85C Min. -- 0.5 3.940 3.050 3.690 Max. 175 -- 4.280 3.555 3.810 Unit A A V V V Condition -- -- VE = 5.0V VE = 5.0V VE = 5.0V NOTE: 1. ECL VIH, VIL and VBB are referenced to VCCE and will vary 1:1...
Description	SINGLE SUPPLY QUAD PECL-TO-TTL W/LATCHED OUTPUT ENABLE
File Size	81.02K / 6 Page	View it Online	Download Datasheet

				WTE[Won-Top Electronics] Won-Top Electronics Co., Ltd.
Part No.	1N5819-T3 1N5819-TB 1N5818-T3 1N5818-TB 1N5817-T3 1N5817-TB 1N5818 1N5819 1N5817
OCR Text	... IRM Cj RJL Tj, TSTG 0.450 0.750 0.550 0.875 1.0 10 110 60 -65 to +150 0.60 0.90 V mA pF K/W C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz an...
Description	1.0A SCHOTTKY BARRIER RECTIFIER 1.0A SCHOTTKY BARRIER RECTIFIER 安培肖特基整
File Size	35.50K / 3 Page	View it Online	Download Datasheet

				Diodes, Inc. DIODES[Diodes Incorporated]
Part No.	1N5819M 1N5818M 1N5817M
OCR Text	...14 1N5818M 30 21 1.0 25 0.450 0.750 0.550 0.875 1.0 10 130 110 -60 to +125 0.600 0.900 1N5819M 40 28 Units V V A A V Maximum Reverse Leakage Current @ VRRM @ TA = 25C @ TA = 100C Typical Thermal Resistance, Junction to Ambient (Note 1) T...
Description	1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 1 A, 20 V, SILICON, SIGNAL DIODE
File Size	57.54K / 2 Page	View it Online	Download Datasheet

				Hi-Sincerity Microelectronics HSMC CORP. HSMC[Hi-Sincerity Mocroelectronics] Hi-Sincerity Mocroelectroni...
Part No.	H1N5819 H1N5818 H1N5817
OCR Text	...e Temperature Range TSTG 0.45 0.750 H1N5817 H1N5818 H1N5819 20 14 20 30 21 30 1 25 0.550 0.875 1 (@ Ta=25C) 10 (@ Ta=100C) 50 110 -65 to +125 -65 to +125 0.600 0.900 40 28 40 Units V V V A A V V mA mA C /W pF C C Note 1: Thermal resistan...
Description	1.0AMP.SCHOTTKY BARRIER RECTIFIERS
File Size	37.26K / 3 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor]
Part No.	MBT35200 MBT35200MT1
OCR Text	....001 0.01 0.1 1.0 100C 25C -55C 750 700 650 600 550 500 450 400 350 300 0 Figure 4. Base Emitter Saturation Voltage versus Collector Current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IC, COLLECTOR CURRENT (...
Description	30 AMP MINIATURE POWER RELAY High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications
File Size	81.31K / 8 Page	View it Online	Download Datasheet

				DIOTEC[Diotec Semiconductor]
Part No.	SM5818 SM5819 SM5817
OCR Text	... 20 30 40 20 30 40 < 0.750 < 0.875 < 0.900 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz ...
Description	Surface Mount Schottky-Rectifiers
File Size	165.83K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	2SK2973 SK2973
OCR Text	...350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 FREQ. (MHz) 50 100 150 200 250 30...875 2.685 2.511 2.342 2.215 2.064 1.936 1.817 1.693 1.585 1.476 1.360 1.263 1.163 1.097 1.039 S21...
Description	From old datasheet system RF POWER MOS FET(VHF/UHF power amplifiers)
File Size	33.43K / 3 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF9085 MRF9085LR3 MRF9085LSR3
OCR Text	...- 28% Adjacent Channel Power -- 750 kHz: - 45.0 dBc @ 30 kHz BW 1.98 MHz: - 60.0 dBc @ 30 kHz BW * Internally Matched, Controlled Q, for Eas...875 880 885 f, FREQUENCY (MHz) 890 895 900 IMD Gps h VDD = 26 Vdc Pout = 90 W (PEP) IDQ = 700 mA Two...
Description	128K 3.3 VOLT SERIAL CONFIGURATION PROM 880 MHz, 90 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
File Size	487.99K / 8 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	BCY59 BCY59IX BCY59VII BCY59VIII BCY59X BCY58X BCY58VII BCY58 BCY58IX BCY58VIII
OCR Text	...CE = 1 V 40 45 60 60 50 150 600 750 - 150 - IC = 100 mA; IB = 2.5 mA hFE DC current gain BCY58/VII; BCY59/VII BCY58/VIII; BCY59/VIII BCY58/IX; BCY59/IX BCY58/X; BCY59/X VCEsat VBEsat Cc Ce fT F collector-emitter saturation volta...
Description	NPN switching transistors
File Size	46.97K / 8 Page	View it Online	Download Datasheet

For .750-.875 Found Datasheets File :: 2368 Search Time::5.25ms
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