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ROHM[Rohm]
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| Part No. |
2SD1859 2SD1767
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| OCR Text |
0.7A)
2SD1767 / 2SD1859
Features 1) High breakdown voltage, BVCEO=80V, and high current, IC=0.7A. 2) Complements the 2SB1189 / 2SB1238.
E...1MHz Conditions
DC current transfer ratio
Transition frequency
Output capacitance
4.5
1.6... |
| Description |
Medium power transistor (80V, 0.7A)
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| File Size |
60.16K /
3 Page |
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ROHM[Rohm]
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| Part No. |
2SD1861 2SD1759
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| OCR Text |
...imensions (Unit : mm)
2SD1759
0.75
5.5 1.5
(3) (2) (1)
2.3
0.9
0.9
0.65
2.3
Equivalent circuit
1.0 0.5 0.5
1.0 0.9...1MHz
DC current transfer ratio
2SD1759 2SD1861
Transition frequency Output capacitance
5... |
| Description |
Power transistor (40V, 2A)
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| File Size |
61.35K /
3 Page |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD1975A 2SD1975
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| OCR Text |
...5
Unit: mm
3.30.2 5.00.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC chara...1MHz VCB = 10V, IE = 0, f = 1MHz 20 200 20 60 20 1.8 2.5 V V MHz pF 200 min typ max 50 50 50 Unit A ... |
| Description |
Silicon NPN triple diffusion planar type(For high power amplification)
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| File Size |
53.22K /
3 Page |
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it Online |
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PANASONIC[Panasonic Semiconductor]
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| Part No. |
2SD2029
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| OCR Text |
...5
Unit: mm
3.30.2 5.00.3 3.0
6.0
s Features
q q q q
Satisfactory foward current transfer ratio hFE collector current IC chara...1MHz VCB = 10V, IE = 0, f = 1MHz 20 210 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit A A
... |
| Description |
Silicon NPN triple diffusion planar type(For high power amplification)
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| File Size |
53.07K /
3 Page |
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ROHM[Rohm]
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| Part No. |
2SD2153
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| OCR Text |
...n voltage, typically VCE(sat) = 0.12V at IC = IB = 1A / 20mA 2) Excellent DC current gain characteristics. External dimensions (Unit : mm)
...1MHz
0.4
1.5
Rev.A
1/2
2SD2153
Transistors
Electrical characteristics curves
2... |
| Description |
High gain amplifier transistor (25V, 2A)
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| File Size |
61.57K /
3 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ628
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| OCR Text |
...speed switching. 1.8V drive.
0.5 3 1.5 2 3.0
(Bottom view)
1
1.0
0.4
2.5 4.25max
0.4
0.75
1 : Gate 2 : Drain 3 : So...1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See s... |
| Description |
Ultrahigh-Speed Switching Applications
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| File Size |
30.69K /
4 Page |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ630
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| OCR Text |
...nted on a ceramic board (600mm2!0.8mm) Tc=25C Conditions Ratings --12 8 --6 --24 1.5 3.5 150 --55 to +150 Unit V V A A W W C C
Electrical...1MHz VDS=-6V, f=1MHz VDS=-6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See spe... |
| Description |
General-Purpose Switching Device Applications
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| File Size |
34.56K /
4 Page |
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it Online |
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SANYO[Sanyo Semicon Device]
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| Part No. |
2SJ656
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| OCR Text |
...
unit : mm 2063A
[2SJ656]
10.0 3.2
3.5 7.2
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter.
...1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See... |
| Description |
High Output MOSFETs
General-Purpose Switching Device
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| File Size |
30.46K /
4 Page |
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it Online |
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Price and Availability
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