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Maixm
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| Part No. |
MAX6030 MAX6021 MAX6012 MAX6041 MAX6025
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| OCR Text |
...initial accuracy of better than 0.2%. These devices are specified over the extended temperature range. These series-mode voltage references draw only 27A of quiescent supply current and can sink or source up to 500A of load current. Unlike ... |
| Description |
Precision, Low-Power, Low-Dropout,SOT23-3 Voltage References
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| File Size |
220.35K /
16 Page |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S12N60B3DS HGTP12N60B3D HGTG12N60B3D FN4411
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| OCR Text |
...perature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Description |
27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode(27A, 600V, UFS系列带超快二极管 N沟道绝缘栅双极型晶体 27 A, 600 V, N-CHANNEL IGBT, TO-263AB
From old datasheet system
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| File Size |
116.56K /
7 Page |
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Intersil, Corp.
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| Part No. |
IRF540 RF1S540SM
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| OCR Text |
...ile Number 2309.6
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title (IRF54 0, RF1S5 40SM) /Subject (28A, 100V, 0.077 Ohm, NChannel P...27A, VGS = 0V (Figure 13) = 25oC, ISD = 28A, dISD/dt = 100A/s = 25oC, ISD = 28A, dISD/dt = 100A/s
... |
| Description |
28A, 100V, 0.077 Ohm,N-Channel PowerMOSFET(28A, 100V, 0.077 Ohm,N沟道增强型功率MOS场效应管) 28 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
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| File Size |
74.46K /
7 Page |
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Intersil
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| Part No. |
FSPJ264F FSPJ264R FN4894
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| OCR Text |
...eatures
* 43A, 250V, rDS(ON) = 0.047 * UIS Rated * Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) * Si...27A, VGS = 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage Drain to Source... |
| Description |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
From old datasheet system
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| File Size |
81.13K /
8 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HUF76633S3S HUF76633P3 FN4693 HUF76633P3T
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| OCR Text |
0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging
JEDEC TO-220AB
SOURCE DRAIN GATE
Features
JEDEC TO-263AB
DRAIN (FLA...27A, VGS = 5V (Figure 9) ID = 27A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance J... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 38A I(D) | TO-220AB
38A, 100V, 0.036 Ohm, N-Channel, Logic 38A, 100V, 0.036 Ohm, N-Channel, Logic
From old datasheet system
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
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| File Size |
335.75K /
9 Page |
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IXYS[IXYS Corporation]
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| Part No. |
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80
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| OCR Text |
0.30 0.35 0.30 0.35
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK IXFK IXFN IXFN
...27A
TJ = 25OC
ID = 13.5A
20
30
40
50
1.0 25
50
75
100
125
150
... |
| Description |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
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| File Size |
159.97K /
4 Page |
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Fairchild Semiconductor, Corp.
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| Part No. |
FQB60N03L
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| OCR Text |
...s
* Fast switching * rDS(ON) = 0.010 (Typ), VGS = 10V * rDS(ON) = 0.017 (Typ), VGS = 5V * Qg (Typ) = 13nC, VGS = 5V * Qgd (Typ) = 4.5nC * C...27A, VGS = 4.5V 1 0.010 0.017 3 0.0135 0.020 V
Dynamic Characteristics
CISS COSS CRSS Qg(TOT) Q... |
| Description |
N-Channel Logic Level PWM Optimized Power MOSFET 51 A, 30 V, 0.0135 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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| File Size |
176.08K /
11 Page |
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it Online |
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