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Monolithic Power System...
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| Part No. |
EV2019-N-00A
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| OCR Text |
0 www.monolithicpower.com 1 11/24/2015 mps proprietary information. patent protec ted. unauthorized photocopy and duplication prohibite...40v input range, low dropout voltage and low quiescent supply current. the low quiescent current a... |
| Description |
40V, 300mA, Low Quiescent Current Linear Regulator Evaluation Board
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| File Size |
204.86K /
6 Page |
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it Online |
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Monolithic Power System...
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| Part No. |
EV2019-33-N-00A
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| OCR Text |
0 www.monolithicpower.com 1 4/23/2015 mps proprietary information. patent protec ted. unauthorized photocopy and duplication prohibited...40v input range, low dropout voltage and low quiescent supply current. the low quiescent current a... |
| Description |
40V, 300mA, Low Quiescent Current Linear Regulator Evaluation Board
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| File Size |
296.12K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP8600S
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| OCR Text |
... recovery time i s =40a, v gs =0 v , - 55 - ns q rr reverse recovery charge di/dt=100a/s - 60 - nc notes: 1.pulse width limited by max. jun...40v , l=0.1mh , r g =25 3.surface mounted on 1 in 2 copper pad of fr4 board 2 ap8600s .
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| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
110.15K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP8600P
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| OCR Text |
... recovery time i s =40a, v gs =0 v , - 60 - ns q rr reverse recovery charge di/dt=100a/s - 80 - nc notes: 1.pulse width limited by max. jun...40v , l=0.1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with ca... |
| Description |
Fast Switching Characteristic
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| File Size |
111.37K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP8600MT
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| OCR Text |
... recovery time i s =19a, v gs =0 v , - 65 - ns q rr reverse recovery charge di/dt=100a/s - 90 - nc notes: 1.pulse width limited by max. jun...40v , l=0.3mh , r g =25 this product is sensitive to electrostatic discharge, please handle with ca... |
| Description |
Ultra Low On-resistance
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| File Size |
69.53K /
6 Page |
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it Online |
Download Datasheet |
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Advanced Power Electron...
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| Part No. |
AP8600MT-L
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| OCR Text |
... recovery time i s =19a, v gs =0 v , - 65 - ns q rr reverse recovery charge di/dt=100a/s - 90 - nc notes: 1.pulse width limited by max. jun...40v , l=0.3mh , r g =25 this product is sensitive to electrostatic discharge, please handle with ca... |
| Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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| File Size |
76.08K /
6 Page |
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it Online |
Download Datasheet |
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Inchange Semiconductor ...
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| Part No. |
2N5191
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| OCR Text |
...taining voltage 2n5192 i c =0.1a; i b =0 80 v v cesat-1 collector-emitter saturation voltage i c =1.5a ;i b =0.15a 0.6 v v ce...40v; i b =0 2n5191 v ce =60v; i b =0 i ceo collector cut-off current 2n5192 v ce =80v; i b =0 ... |
| Description |
Silicon NPN Power Transistors
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| File Size |
36.46K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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