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  0.6-0.6mm Datasheet PDF File

For 0.6-0.6mm Found Datasheets File :: 17308    Search Time::2.281ms    
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    IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF9Z14S IRF9Z14L IRF9Z14STRL IRF9Z14STRR
OCR Text ...l D VDSS = -60V RDS(on) = 0.50 G S ID = -6.7A Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with t...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSFET(减振钢板基本\u003d- 60V的,的Rds(on)\u003d 0.50ohm,身份证\u003d- 6.7A
Power MOSFET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A)
HEXFET? Power MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 357.87K  /  10 Page

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    IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL

IRF[International Rectifier]
Part No. IRF9Z24L IRF9Z24S IRF9Z24STRR IRF9Z24STRL
OCR Text ...l D VDSS = -60V RDS(on) = 0.28 G ID = -11A S Third Generation HEXFETs from International Rectifier utilize advanced processi...6 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 2...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A)
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)

File Size 307.08K  /  10 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...6 and 13 --- VDD = -28V --- ID = -7.2A ns --- RG = 24 --- RD = 3.7, See Fig. 10 Between lead, nH 7...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...6-32 or M3 screw Max. -12 -8.5 -48 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from cas...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR

IRF[International Rectifier]
Part No. IRF9Z34L IRF9Z34S IRF9Z34STRL IRF9Z34STRR
OCR Text ...l D VDSS = -60V RDS(on) = 0.14 G S ID = -18A Third Generation HEXFETs from International Rectifier utilize advanced processin...6 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 2...
Description -60V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A)
Power MOSFET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)

File Size 330.76K  /  10 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...l D VDSS = -55V RDS(on) = 0.10 G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...6 2 Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 2...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ... VDSS = -55V G S RDS(on) = 0.10 ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...6-32 or M3 screw Max. -19 -14 -68 68 0.45 20 180 -10 6.8 -5.0 -55 to + 175 300 (1.6mm from case...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM

MAXIM[Maxim Integrated Products]
Part No. MAX1020 MAX1020BETX MAX1021 MAX1021BETX MAX1022 MAX1022BETX MAX1023 MAX1023BETX MAX1057 MAX1057BETM MAX1058 MAX1058BETM
OCR Text ...s) and low digital feedthrough (0.5nV*s) of the integrated octal DACs make these devices ideal for digital control of fast-response closed-l...6 Differential Channels (Unipolar or Bipolar) 8 Single-Ended Channels or 4 Differential Channels (Un...
Description 10-Bit Multichannel ADCs/DACs with FIFO Temperature Sensing and GPIO Ports
10-Bit, Multichannel ADCs/DACs with FIFO, Temperature Sensing, and GPIO Ports

File Size 1,321.21K  /  47 Page

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    MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Part No. MAX2320 MAX2320EUP MAX2321 MAX2321EUP MAX2322 MAX2322EUP MAX2324 MAX2324EUP MAX2325 MAX2326 MAX2326EUP MAX2327 MAX2327EUP MAX2329 MAX2323
OCR Text ...O Frequency Divider (MAX2326) o 0.1A Shutdown Current o 20-Pin TSSOP-EP Package General Description The MAX2320/MAX2321/MAX2322/MAX2324/...6.3mm RLNA 3 LNAINH 4 LNAINL 5 BAND 6 LIN 7 GAIN 8 LOLIN 9 LOHIN 10 MAX2320 MAX2321 MAX2326 ...
Description Adjustable, High-Linearity, SiGe, Dual-Band, LNA/Mixer ICs
Adjustable / High-Linearity / SiGe Dual-Band LNA/Mixer ICs
Adjustable, High-Linearity, SiGe Dual-Band LNA/Mixer ICs

File Size 521.05K  /  28 Page

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    SGW25N120

INFINEON[Infineon Technologies AG]
Part No. SGW25N120
OCR Text ...e Soldering temperature, 1.6mm (0.063 in.) from case for 10s Tj , Tstg -55...+150 260 C 1) VCE 1200V IC 25A Eoff 2.9mJ Tj 150C ...6 4.3 5 A - 20 350 1400 100 2600 190 130 300 nC nH A nA S pF IGES gfs Ciss Coss Crss QGa...
Description IGBTs & DuoPacks - 25A 1200V TO247AC IGBT
Fast IGBT in NPT-technology
TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,49A I(C),TO-247AC

File Size 375.62K  /  11 Page

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