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16F73 32D271K FE0202 C10E1 UDN2987A 35003 HMC51709 TCVT1300
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  0.8a -0.6a Datasheet PDF File

For 0.8a -0.6a Found Datasheets File :: 3578    Search Time::1.906ms    
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    MCM63P636TQ200 MCM63P636TQ200R MCM63P636 MCM63P636ZP200 MCM63P636ZP200R MCM63P636ZP225 MCM63P636ZP225R MCM63P636ZP250 MC

MOTOROLA[Motorola, Inc]
Part No. MCM63P636TQ200 MCM63P636TQ200R MCM63P636 MCM63P636ZP200 MCM63P636ZP200R MCM63P636ZP225 MCM63P636ZP225R MCM63P636ZP250 MCM63P636ZP250R
OCR Text ... a 3.3 V core power supply, a 2.0 V input power supply, and a 2.0 V I/O power supply. These power supplies are designed so that power sequen...8A, 2C, 8C, 2E, 8E, 2G, 8G, 2J, 8J, 2L, 8L, 2N, 8N, 2R, 8R, 2U, 8U 1A, 9A, 1C, 3C, 7C, 9C, 1E, 4E, 5...
Description 64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM

File Size 328.27K  /  27 Page

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    IRPT1061A

IRF[International Rectifier]
Part No. IRPT1061A
OCR Text 0.75 kW) power output Industrial rating at 150% overload for 1 minute * * * * * * * * * * 180-240V AC input, 50/60 Hz 3-phase rectifi...8a. Power Module Package Outline page 7 IRPT1061A NOTE: Dimensions are in inches (millimete...
Description Power Module for 1 hp Motor Drives

File Size 234.28K  /  12 Page

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    NTE2923

NTE[NTE Electronics]
Part No. NTE2923
OCR Text .... . . . . . . . . . . . . . . . 0.83C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . ....8A ISD 8.8A, di/dt 100A/s, VDD 500V, TJ +150C Pules Width 300s, Duty Cycle 2%. Electrical C...
Description MOSFET N-Ch, Enhancement Mode High Speed Switch

File Size 28.63K  /  3 Page

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    NTE2936

NTE[NTE Electronics]
Part No. NTE2936
OCR Text ...Operating Area D Lower RDS(on): 0.308 Typ D Lower Leakage Current: 10A (Max) @ VDS = 500V Absolute Maximum Ratings: Drain-to-Source Voltage,...8A, Note 4 VDS = 50V, ID = 4.8A, Note 4 VGS = 0V, VDS = 25V, f = 1MHz Test Conditions VGS = 0V, ID =...
Description MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 23.31K  /  3 Page

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    NTE2946 NTE2944

NTE Electronics, Inc.
NTE[NTE Electronics]
Part No. NTE2946 NTE2944
OCR Text .... . . . . . . . . . . . . . . . 0.32W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....8A, VGS = 0V, Note 4 TJ = +25C, IF = 8A, dIF/dt = 100A/s VGS = 10V, ID = 8A, VDS = 0.8 Max. Rating, ...
Description 30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MOSFET N-Channel, Enhancement Mode High Speed Switch

File Size 25.19K  /  3 Page

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    T106B1 T106D1 T106M1 S2008DS2 S2008DS3 S4008DS2 S4008DS3 S6008DS2 S6008DS3 EC103M1 S4004DS1 S4004DS2 S4004VS1 S4004VS2 S

TECCOR[Teccor Electronics]
Renesas Electronics, Corp.
Littelfuse, Inc.
Part No. T106B1 T106D1 T106M1 S2008DS2 S2008DS3 S4008DS2 S4008DS3 S6008DS2 S6008DS3 EC103M1 S4004DS1 S4004DS2 S4004VS1 S4004VS2 S2008LS3 S4006FS31 S2010LS3 S6006FS21 S2006VS3 S2006FS21 S2006DS2 S2004VS2 S2006LS2 S2006LS3 S4008LS2 S2004DS1 TCR22-4 TCR22-6 S2010FS31 S2010DS2 S4006LS2 EC103M2 EC103D EC103D3 EC103M3 EC103B1 EC103D1 EC103D2 EC103B2 EC103B3 S4008VS2 S4006DS3 S4010LS2 S4010VS2 S4010FS21 S4010FS31 S4010LS3 S4010DS3 S4006LS3 S4010VS3 S4008FS21 S4008VS3 S4006VS3 TCR22-8 S2006FS31 S2006VS2 S2004VS1 S2006DS3 S2S S6004DS1 S6004DS2 S6004VS1 T107M1 S2S1 S2S3 S4S1 S4S2 S2010DS3 S2010FS21 2N5064 S6S S6S1 S6S2 S6S3 S6010DS3 S2010LS2 S2008LS2
OCR Text ...TO-251 V-Pak A K G (0.8 A to 10 A) E5 General Description The Teccor line of sensitive SCR semiconductors are half-wave uni...8A 10 A Specific Test Conditions di/dt -- Maximum rate-of-change of on-state current; IGT = 5...
Description (T10x) Sensitive SCRs
BOX EXTRUD ALUM 6.30X6.30X2.03,1
Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:14-18
PTSE 19C 19#20 SKT PLUG
Sensitive SCRs 敏感可控

File Size 195.84K  /  12 Page

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    STB6NB50 STB6NB50-1

STMicroelectronics N.V.
ST Microelectronics
SGS Thomson Microelectronics
Part No. STB6NB50 STB6NB50-1
OCR Text ...er Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Facto...
Description FUSE/SM .8W, VMAX = 6 VDC, I(TRIP) = 2.2 A 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 5.8AI(四)|62AA
N-CHANNEL Power MOSFET
N - CHANNEL 500V - 1.35ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET
N - CHANNEL 500V - 1.35 Ohm - 5.8A - D2PAK/I2PAK PowerMESH MOSFET

File Size 91.62K  /  9 Page

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    LT1076-5 LT1076C-5 LT1076HV-5 LT1076HVC-5 LT1076HVI-5 LT1076I-5 LT10765 LT1076CT-5 LT1076HVCT-5 LT1076IT-5 LT1076CY-5 LT

Linear Technology, Corp.
LINER[Linear Technology]
Part No. LT1076-5 LT1076C-5 LT1076HV-5 LT1076HVC-5 LT1076HVI-5 LT1076I-5 LT10765 LT1076CT-5 LT1076HVCT-5 LT1076IT-5 LT1076CY-5 LT1076CR-5 LT1076HVIT-5
OCR Text ...AG210LL + C3 200F C2 0.033F + C1 500F 25V LT1076-5 TA01 U VALUE MAY BE REDUCED TO 50H FOR OUTPUT LOADS BELOW 1.5A UO UO 1 LT1076-5 ABSOLUTE AXI U RATI GS PACKAGE/ORDER I FOR ATIO FRONT VIEW 7 6 5 4 3 2 ...
Description RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器
5V Step-Down Switching Regulator
From old datasheet system

File Size 168.45K  /  4 Page

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