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  1-30a Datasheet PDF File

For 1-30a Found Datasheets File :: 9820    Search Time::1.735ms    
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    K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K6T0808C1D-RL55 K6T0808C1D-TP70 K6T0808C1D-TL55 K6T0808C1D-TL70 K6T0808C1D-DL55 K6T0808C1D-DL70 K6T0808C1D-GB55 K6T0808C1D-GF70 K6T0808C1D-F K6T0808C1D-GB70 K6T0808C1D-GL55 K6T0808C1D-GL70 K6T0808C1D-GP70 K6T0808C1D-L K6T0808C1D-P K6T0808C1D-RB55 K6T0808C1D-RB70 K6T0808C1D-RF70 K6T0808C1D-RL70 K6T0808C1D-RP70 K6T0808C1D-TB55 K6T0808C1D-TB70 K6T0808C1D-TF70 K6T0808C1D-B K6T0808C1D-DB55 K6T0808C1D-DB70
OCR Text ...ory Revision No History 0.0 0.1 Initial draft First revision - KM62256DL/DLI ISB1 = 100 50A KM62256DL-L ISB1 = 20 10A KM62256DLI-L ISB1 ...30A KM62256DL-L ISB1 = 10 5A KM62256DLI-L ISB1 = 15 5A - Improved data retention current KM62256DL...
Description 32K X 8 STANDARD SRAM, 70 ns, PDSO28
32Kx8 bit Low Power CMOS Static RAM 32Kx8位低功耗CMOS静态RAM
D2 - GLENAIR 32Kx8位低功耗CMOS静态RAM

File Size 169.00K  /  9 Page

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    IRF6619TRPBF IRF6619PBF

International Rectifier
Part No. IRF6619TRPBF IRF6619PBF
OCR Text ... RDS(on) RDS(on) 20V max 1.65m@ 10V 2.2m@ 4.5V Qg tot Qgd 13nC Qgs2 3.5nC Qrr 18nC Qoss 22nC Vgs(th) 2.0V ...30A VDS = 16V VDS= 10V 4.0 6.0 8.0 VGS, Gate-to-Source Voltage (V) 10.0 40 60 80 ...
Description DirectFET Power MOSFET

File Size 288.03K  /  10 Page

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    HUR3020CT

Sirectifier Semiconductors
Part No. HUR3020CT
OCR Text ...6 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Symbol IFRMS IFAVM IFSM EA...30A IF = 15A IF = 7.5A 10 15 VR = 150V A 20 TVJ = 100C VR = 150V IF = 30A IF = 15A IF = 7.5A 0 0 ...
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

File Size 307.68K  /  3 Page

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    SSP45N10

SeCoS Halbleitertechnologie GmbH
Part No. SSP45N10
OCR Text ...et 26-oct-2013 rev. a page 1 of 4 s op - 8pp top view 45n10 = date code ...30a gate resistance r g - 1.9 3.8 f=1mhz gate-body leakage current i gss - - 100 ...
Description N-Channel Enhancement Mode MOSFET

File Size 574.49K  /  4 Page

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    HUR3020CTS

Sirectifier Semiconductors
Part No. HUR3020CTS
OCR Text ...imeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 8.00 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.89 Inches Min. Max. .160 .080 .020 .045 .01...30A IF = 15A IF = 7.5A 10 15 VR = 150V A 20 TVJ = 100C VR = 150V IF = 30A IF = 15A IF = 7.5A 0 0 ...
Description High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode

File Size 236.59K  /  3 Page

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    TIP30A TIP30B TIP30 TIP30C

Savantic, Inc.
Part No. TIP30A TIP30B TIP30 TIP30C
OCR Text ...ching applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYM...30A TIP30B/30C IC=-1A ;IB=-0.125A IC=-1A ; VCE=-4V VCE=-40V; VEB=0 VCE=-60V; VEB=0 CONDITIONS SYMBOL...
Description Silicon PNP Power Transistors

File Size 99.72K  /  3 Page

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    FFPF30UP20STU FFPF30UP20S08

Fairchild Semiconductor
Part No. FFPF30UP20STU FFPF30UP20S08
OCR Text ...n * Power switching circuits 1 TO-220F 1. Cathode 2. Anode C 1 1. Cathode 2 2. Anode Absolute Maximum Ratings T Symbol VRRM...30A IF = 30A VR = 200V VR = 200V IF =1A, di/dt = 100A/s, VCC = 30V IF =30A, di/dt = 200A/s, VCC = 13...
Description Ultrafast Recovery Power Rectifier

File Size 228.07K  /  5 Page

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    Tamura
Part No. L18P020D15
OCR Text ...=0a 0v0.050v@ i f =0a accuracy 1 x 1%@i f outputlinearity 1 l ?1%@i f powersupply v cc 15v5% consumptioncurrent i c 15ma responsetime 2 ...30a 1.6 4 3 2 1 4 3 2 1 6() 5(+) 6() 5(+) +i f v out gnd +v cc v cc r l =10k i f ...
Description Hall Effect Current Sensors

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    Micross Components
Part No. ICE30N60W
OCR Text ...ail: chipcomponents@micross.com 1 thermal characteristics r thjc thermal resistance, junction to case - - 0.3 c/w r thja thermal resistance...30a, r g = 4? (external) t r rise time - 25 - t d(of ) turn-of delay time - 20 - t f fall time - 2...
Description N-Channel Enhancement Mode MOSFET

File Size 751.84K  /  4 Page

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    BYT30P-1000 BYT30P-1000-SOD93 BYT30P-1000SOD93 BYT30P-1000.SOD93 -BYT30P-1000.SOD93 -BYT30P-1000SOD93

STMicroelectronics N.V.
意法半导
SGS Thomson Microelectronics
Part No. BYT30P-1000 BYT30P-1000-SOD93 BYT30P-1000SOD93 BYT30P-1000.SOD93 -BYT30P-1000.SOD93 -BYT30P-1000SOD93
OCR Text ...) Junction-case Parameter Value 1 Unit C/W October 1999 - Ed: 2A 1/5 BYT 30P-1000 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25C Tj = 100C VF Tj = 25C Tj = 100C IF = 30A Test Conditions VR = VRRM Min. Typ. M...
Description Very low drop voltage regulators with inhibit 快速恢复整流二极管
Multiconductor Cable; Number of Conductors:3; Conductor Size AWG:20; No. Strands x Strand Size:19 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Temperature Max:105 C; Voltage Nom.:600V RoHS Compliant: Yes
FAST RECOVERY RECTIFIER DIODE

File Size 64.30K  /  5 Page

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