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HSMC CORP.
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| Part No. |
HJ42C
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| OCR Text |
...hing times (us) v cc =30v, i c =10i b1 =-10i b2 tstg ton tf capacitance & reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob safe operating area 1 10 100 1000 10000 100000 1 10 100 forward voltag... |
| Description |
PNP EPITAXIAL PLANAR TRANSISTOR
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| File Size |
32.39K /
3 Page |
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it Online |
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HSMC CORP.
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| Part No. |
HJ50
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| OCR Text |
...... tstg ton tf v cc =30v, i c =10i b1 =-10i b2 capacitance & reverse-biased voltage 1 10 100 0.1 1 10 100 reverse-biased voltage (v) capacitance (pf) cob safe operating area 1 10 100 1000 10000 1 10 100 1000 forward voltage-v ce (v) colle... |
| Description |
NPN EPITAXIAL PLANAR TRANSISTOR
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| File Size |
30.63K /
3 Page |
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it Online |
Download Datasheet |
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SANYO
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| Part No. |
2SC3143
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| OCR Text |
... i b1 i b2 100 m f 470 m f --5v 10i b1 =--10i b2 =i c =10ma v r + + r l (for pnp, the polarity is reversed.) output switching time test circuit
no.1057-3/4 2sa1257/2sc3143 -- 1.0 23 3 57 -- 10 7 -- 100 5 2 7 100 10 5 5 3 2 3 2 itr03134 f ... |
| Description |
NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications
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| File Size |
39.45K /
4 Page |
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it Online |
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UTC
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| Part No. |
2SB1116 2SB1116A
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| OCR Text |
...1mhz t stg t f t on vcc=-10v ic=10i b1 =-10i b2 current gain bandwidth product current gain-bandwidth product, f t (mhz) 1000 1 -0.1 -1 -10 100 10 collector current, ic (ma) -0.01 v ce =-2v safe operating area collector current, ic (a)... |
| Description |
PNP EPITAXIAL SILICON TRANSISTOR
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| File Size |
125.07K /
4 Page |
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it Online |
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Sanyo Electric
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| Part No. |
B817C
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| OCR Text |
...=20 m s i b1 d.c. 1% i b2 i c =10i b1 = --10i b2 =5a for pnp, the polarity is reversed. i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a i c -- v ce collector-to-emitter voltage, v ce -- ... |
| Description |
Search --To 2SB817C
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| File Size |
211.51K /
4 Page |
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it Online |
Download Datasheet |
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