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  11.5-24v Datasheet PDF File

For 11.5-24v Found Datasheets File :: 11476    Search Time::1.875ms    
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    ZXM64P03 ZXM64P035 ZXM64P035L3

ZETEX PLC
ZETEX[Zetex Semiconductors]
Part No. ZXM64P03 ZXM64P035 ZXM64P035L3
OCR Text ...=0V, f=1MHz ns ns ns ns 46 9 11.5 nC nC nC V DS =-24V,V GS =-10V, I D =-2.4A V DD =-15V, I D =-2.4A R G =6.0 , V GS =-10V -0.95 V ns nC T J =25 C, I S =-2.4A, V GS =0V T J =25 C, I F =-2.4A, di/dt= 100A/ s NOTES (1) Measured ...
Description 35V P-CHANNEL ENHANCEMENT MODE MOSFET
P-channel MOSFET

File Size 95.68K  /  4 Page

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    IRF7201 IRF7201PBF IRF7201TR

International Rectifier
Part No. IRF7201 IRF7201PBF IRF7201TR
OCR Text ...junction temperature. (See fig. 11) ISD 4.6A, di/dt 120A/s, VDD V(BR)DSS, TJ 150C VDD = 15V, starting TJ = 25C, L = 6.6mH RG =...5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) 10 I D, Drain-...
Description Generation V Technology
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 111.54K  /  7 Page

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    IRF7205 IRF7205PBF IRF7205TR

IRF[International Rectifier]
Part No. IRF7205 IRF7205PBF IRF7205TR
OCR Text ...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient - VDD IRF7205 Current Regul...5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 13.For P-Channel HEXF...
Description -30V Single P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 162.31K  /  9 Page

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    IRF7303 IRF7303TR

International Rectifier
http://
Part No. IRF7303 IRF7303TR
OCR Text ...unction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. I SD 2.4A, di/dt 73A/s, VDD V(BR)DSS , TJ 150C Surf...5.5V 5.0V BOTT OM 4.5V TOP 1000 I , D ra in -to -S o u rc e C u rre n t (A ) D 100 I , D...
Description Generation V Technology
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)

File Size 107.34K  /  9 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ... VGS = -10V, See Fig. 6 and 12 11 --- VDD = -15V 17 --- I D = -1.8A ns 25 --- RG = 6.0 18 --- RD = 8.2, See Fig. 10 D 4.0 6.0 440 200 ...5 G S pF Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t on Para...
Description Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ...- -- 7.9 -- -- 9.0 -- 6.8 -- -- 11 -- -- 21 -- -- 17 -- -- 22 -- -- 25 -- -- 7.7 -- -- 18 -- -- 4.0 -- -- 6.0 -- -- 520 -- -- 440 -- -- 180 ...5 nH Between lead tip and center of die contact N-Channel VGS = 0V, VDS = 15V, = 1.0MHz pF P-Channe...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...unction temperature. ( See fig. 11 ) ISD 4.0A, di/dt 74A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface m...5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 I D , Drain-to-Source Current (A) I D, Drain-to-Sou...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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    IRF7316

IRF[International Rectifier]
Part No. IRF7316
OCR Text ...unction temperature. ( See fig. 11 ) ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surf...5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I...
Description HEXFET POWER MOSFET

File Size 235.36K  /  7 Page

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    IRF7319

IRF[International Rectifier]
Part No. IRF7319
OCR Text ...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7319 100 TOP BOTTOM VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V 3.0V P-Channel 100 TOP BOTTOM - -I D , Drain-to-Source Current...
Description HEXFET Power MOSFET
HEXFET?? Power MOSFET

File Size 128.05K  /  10 Page

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    IRF7328 IRF7328TR

International Rectifier
Part No. IRF7328 IRF7328TR
OCR Text ...lar Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - VDD 5 IRF7328 RDS ( on ) , Drain-to-Source On Resistance ( ) ( RDS(on), Drain-to -Source On Resistance ...
Description    HEXFET Power MOSFET
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 106.75K  /  8 Page

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