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  2-1 2a Datasheet PDF File

For 2-1 2a Found Datasheets File :: 43041    Search Time::2.797ms    
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    IR2110L6

IRF[International Rectifier]
Part No. IR2110L6
OCR Text ...upply Voltage Transient (Figure 2) Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage...1.6 75 125 150 300 Units V V/ns W C/W C g 1.5 (typical) To Order Previous Datashee...
Description HIGH AND LOW SIDE DRIVER

File Size 337.18K  /  14 Page

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    IR2110L

IRF[International Rectifier]
Part No. IR2110L
OCR Text ...upply Voltage Transient (Figure 2) Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage...1.6 -- 75 -55 125 -55 150 -- 300 1.5 (typical) V V/ns W C/W C g 2/14/97 IR2110L4 Recommend...
Description HIGH AND LOW SIDE DRIVER

File Size 131.31K  /  14 Page

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    IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF

International Rectifier
Part No. IR2110 IR2110PBF IR2110S IR2110SPBF IR2113PBF IR2113S IR2113SPBF
OCR Text ...upply voltage transient (figure 2) Package power dissipation @ TA +25C Thermal resistance, junction to ambient Junction temperature Storage...1.6 1.25 75 100 150 150 300 Units V V/ns W C/W C Recommended Operating Conditions ...
Description HIGH AND LOW SIDE DRIVER

File Size 218.79K  /  16 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ... (m) ) 85@VGS = 4.5V 170@VGS = 2.7V ID 4.0A 3.2a These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced ...1 8 A A D D D D 2 7 3 6 4 5 T o p V ie w SO-8 Absolute Maximum Rati...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ...8 N-Ch P-Ch VDSS 30V -30V 2 7 3 6 4 5 P -C H A N N E L M O S F E T RDS(on) 0.10 0.25 T o p V iew Recommended ...1.7 N-Channel Maximum P-Channel 30 20 -2.3 -1.8 -10 -1.3 2.0 1.3 57 -1.3 0.25 Units V ...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ...G1 S2 G2 1 D1 D1 D2 D2 2 7 VDSS = 30V 3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Description Fifth Generation HEXFETs from Inter...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profi...1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Jun...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12a) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12a条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12a)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ... -12 -8.5 -48 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12a)

File Size 105.16K  /  8 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...istance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z34NL) is available for lowprofil...1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Jun...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ... Typ. --- 0.50 --- Max. 2.2 --- 62 Units C/W 8/25/97 IRF9Z34N Electrical Characteristics @ TJ = 25C (unless otherwise spe...1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr t...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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For 2-1 2a Found Datasheets File :: 43041    Search Time::2.797ms    
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