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  204.0mm Datasheet PDF File

For 204.0mm Found Datasheets File :: 2183    Search Time::2.625ms    
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    BCR133 Q62702-C2256

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BCR133 Q62702-C2256
OCR Text ...perature Symbol Values 50 50 10 20 100 200 150 - 65 ... + 150 mA mW C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance ...40mm x 40mm x 1.5mm / 6cm2 Cu Semiconductor Group 1 Nov-26-1996 BCR 133 Electrical Ch...
Description NPN Silicon Digital Transistor (Switching circuit/ inverter/ interface circuit/ driver circuit)
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)
From old datasheet system

File Size 35.30K  /  4 Page

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    BCR166W

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BCR166W
OCR Text ...n Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 10 2 IC mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0...
Description From old datasheet system
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

File Size 34.93K  /  4 Page

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    BCR166 Q62702-C2339

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BCR166 Q62702-C2339
OCR Text ...n Voltage VCEsat = f(IC), hFE = 20 10 3 10 2 - hFE 10 2 IC mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 0 0.0 0.2 0.4 0.6 V IC 1.0 V CEsat Input on Voltage Vi(on) = f(IC) VCE = 0...
Description From old datasheet system
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit)

File Size 35.46K  /  4 Page

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    BCR400R Q62702-C2479

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BCR400R Q62702-C2479
OCR Text ...on Values typ. max. Unit I0 20 0.1 40 A mA - VS = 3 V Lowest stabilizing current Imin VS = 3 V DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage VSmin 1.6 0.65 0.08 0.15 0.2 - V ...
Description From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)

File Size 90.56K  /  7 Page

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    BCR400W Q62702-C2481

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BCR400W Q62702-C2481
OCR Text ...on Values typ. max. Unit I0 20 0.1 40 A mA - VS = 3 V Lowest stabilizing current Imin VS = 3 V DC Characteristics with stabilized NPN-Transistors Lowest sufficient battery voltage VSmin 1.6 0.65 0.08 0.15 0.2 - V ...
Description From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
ECONOLINE: REZ - Cost Effective- 1kVDC & 2kVDC Isolation- Custom Solutions Available- No Extern. Components Required- UL94V-0 Package Material- Efficiency to 85%

File Size 93.96K  /  7 Page

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    IPB15N03L IPP15N03L 15N03L

INFINEON[Infineon Technologies AG]
Part No. IPB15N03L IPP15N03L 15N03L
OCR Text ...v/dt VGS Ptot T j , Tstg 168 20 8 6 20 83 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=20A, VDD=25V, RGS=25 ...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description IPP15N03L
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series

File Size 448.37K  /  8 Page

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    IPD12N03L IPU12N03L

INFINEON[Infineon Technologies AG]
http://
Part No. IPD12N03L IPU12N03L
OCR Text ...sipation TC=25C VGS Ptot 20 100 V W Operating and storage temperature IEC climatic category; DIN IEC 68-1 Tj , Tstg -55.....40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB...
Description DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series

File Size 151.83K  /  8 Page

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    BCR112W Q62702-C2284

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BCR112W Q62702-C2284
OCR Text ...rent ICBO 100 nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage ...
Description NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit)
NPN Silicon Digital Transistor (Switching circuit inverter inferface circuit driver circuit)
From old datasheet system

File Size 35.04K  /  4 Page

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    BCR112 Q62702-C2254

SIEMENS[Siemens Semiconductor Group]
Part No. BCR112 Q62702-C2254
OCR Text ...rent ICBO 100 nA mA 1.61 20 V 0.3 1.5 2.5 6.2 1.1 k - VCB = 40 V, IE = 0 Emitter cutoff current IEBO hFE VCEsat Vi(off) 0.8 VEB = 10 V, IC = 0 DC current gain IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage ...
Description From old datasheet system
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)

File Size 35.58K  /  4 Page

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    BSS84PW

INFINEON[Infineon Technologies AG]
Part No. BSS84PW
OCR Text ...pation VGS Ptot Tj , Tstg 20 0.3 -55...+150 55/150/56 V W C T A = 25 C Operating and storage temperature IEC climatic category;...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PC...
Description SIPMOS Small-Signal-Transistor

File Size 79.92K  /  8 Page

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For 204.0mm Found Datasheets File :: 2183    Search Time::2.625ms    
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