2097152-words x 4 banks x 36-b pdf Datasheet P9 Description --- IC-ON-LINE


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2097152-words x 4 banks x 36-b Datasheet PDF File

For 2097152-words x 4 banks x 36-b Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Toshiba Corporation
Part No.	TC59LM814CFT-60 TC59LM806CFT-60 TC59LM806CFT-50 TC59LM806CFT-55 TC59LM814CFT-50 TC59LM814CFT-55
Description	4,194,304 / 8,388,608-WORDS x 4 banks x 16 / 8-BITS Network FCRAM 4,194,304-WORDSx4 banksx16-BITS Network FCRAM or 8,388,608-WORDSx4banksx8-BITS Network FCRAM
File Size	2,318.19K / 38 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	TC554001FI TC554001FI-10 TC554001FI-85 TC554001FTI-10 TC554001FTI-85 TC554001FTI
Description	524288 WORDS x 8BIT STATIC RAM 524,288 WORDS x 8BIT STATIC RAM
File Size	366.31K / 9 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S641632C K4S641632C-TC_L70 K4S641632C-TC_L80 K4S641632C-TC_L75 K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/L1L K4S641632C-TC/L70 K4S641632C-TC/L80 K4S641632C-TC/L60 K4S641632C-TC/L75 K4S641632C-TL60 K4S641632C-TC80
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 banks Synchronous DRAM 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 166MHz
File Size	1,152.92K / 42 Page	View it Online	Download Datasheet

				Elpida Memory, Inc.
Part No.	EDS6416AHBH-75-E EDS6416CHBH-75-E
Description	64M bits SDRAM (4M words x 16 bits) 4M x 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA60 64M bits SDRAM (4M words x 16 bits) 6400位的SDRAM4分字× 16位）
File Size	703.80K / 49 Page	View it Online	Download Datasheet

				HYNIx[Hynix Semiconductor]
Part No.	GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C18163CL-7 GM71C18163CJ-6
Description	1,048,576 words x 16 bit CMOS DRAM, 60ns 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
File Size	110.98K / 11 Page	View it Online	Download Datasheet

				Catalyst Semiconductor EEPROM ON Semiconductor NxP Semiconductors N.V.
Part No.	CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-GT2 CAT1023WI-30-GT2 CAT1023YI-30-GT2 CAT1023YI-42-GT2 CAT1023ZD4I-42-GT2 CAT1023ZI-42-GT2 CAT1023YI-25-GT2 CAT1023YI-25T3 CAT1023YI-28-GT2 CAT1023YI-28-GT3 CAT1023YI-28T3 CAT1023YI-45-GT2 CAT1023WI-30-GT3 CAT1023ZD4I-30-GT3 CAT1023ZI-30-GT3 CAT1023ZD4I-42-GT3 CAT1023YI-25-GT3 CAT1023LI-45T3 CAT1023LI-42T3 CAT1023ZI-25-GT2 CAT1023ZI-25T2 CAT1023ZI-28-GT3 CAT1023ZI-25-GT3 CAT1023ZI-28T3 CAT1023ZI-28T2 CAT1023ZI-28-GT2 CAT1023ZI-25T3 CAT1023ZI-30-GT2 CAT1023ZD4I-28-GT3 CAT1023ZD4I-28-GT2 CAT1023ZD4I-25-GT2 CAT1023ZD4I-25-GT3 CAT1023ZD4I-45-GT3 CAT1023ZI-45-GT2 CAT1023WI-45-GT2 CAT1023LI-45-GT2 CAT1023LI-45T2 CAT1023LI-45-GT3 CAT1023WI-45T3 CAT1023WI-28T3 CAT1023WI-42T3 CAT1023WI-30T3 CAT1023WI-28-GT2 CAT1023WI-25T3 CAT1023WI-28-GT3 CAT1023WI-45-GT3 CAT1023YI-45-GT3 CAT1023YI-42T3 CAT1023ZI-42T2 CAT1023ZI-45-GT3 CAT1023ZI-42-GT3 CAT1023ZD4I-25T3 CAT1023ZD4I-28T3 CAT1023YI-30T3 CAT1023YI-45T3 CAT1023ZI-30T2
Description	Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
File Size	271.07K / 21 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	HD404342RFP HD404344RFP HD404C342RFP HD404C344RFP HD404341RFP HD404C341RFP HD404344RFT HD404C344RFT HD404394FP HD404391FT
Description	ROM: 2.048 words; RAM: 256; ; 4-bit microcomputer ROM: 4.096 words; RAM: 256; ; 4-bit microcomputer ROM: 1.024 words; RAM: 256; ; 4-bit microcomputer
File Size	621.36K / 100 Page	View it Online	Download Datasheet

				Winbond Electronics Corp http:// Winbond Electronics, Corp.
Part No.	W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I
Description	1M × 4 banks × 16 BITS SDRAM 1M 4 banks 16 BITS SDRAM 4M x 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO54
File Size	1,182.51K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description	256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. K4R271669B:Direct RDRAMData Sheet 256K x 16/18 bit x 32s banks Direct RDRAMTM 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
File Size	304.91K / 20 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor
Part No.	MH2S64CWZTJ-12 MH2S64CZTJ-12 MH2S64CZTJ-15 MH2S64CZTJ-1539 MH2S64CZTJ_2BCWZTJ MH2S64CWZTJ-15 MH2S64CWZTJ-1539
Description	134217728-BIT (2097152-WORD BY 64-BIT)SynchronousDRAM From old datasheet system
File Size	691.54K / 45 Page	View it Online	Download Datasheet

For 2097152-words x 4 banks x 36-b Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

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