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Infineon Technologies A...
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Part No. |
IPD80R1K4P7
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OCR Text |
...v, v gs =13v, i d =1.4a, r g =22 w rise time t r - 8 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w turn-off delay time t d(off) - 40 - ns v dd =400v, v gs =13v, i d =1.4a, r g =22 w fall time t f - 20 - ns v dd =400v, v gs =13v, ... |
Description |
800V CoolMOSa P7 Power Transistor
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File Size |
1,196.03K /
13 Page |
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it Online |
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Infineon
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Part No. |
BTS432-D2 BTS432-D2E3043 BTS432-D2E3062A
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OCR Text |
22 smart highside power switch features load dump and reverse battery protection 1 ) clamp of negative voltage at output short-circuit...6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air.... |
Description |
PROFET Smart High Side Power Switch
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File Size |
200.46K /
14 Page |
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it Online |
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SIEMENS A G
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Part No. |
BTS432E2-E3062A BTS432E2E3043 SIEMENSAG-BTS432E2
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OCR Text |
22 smart highside power switch features load dump and reverse battery protection 1 ) clamp of negative voltage at output short-circuit...6cm 2 (one layer, 70 m m thick) copper area for v bb connection. pcb is vertical without blown air.... |
Description |
TRANSISTOR SMD PROFET LESITUNGS MOSFET 44 A BUF OR INV BASED PRPHL DRVR, PSFM5
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File Size |
190.21K /
14 Page |
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it Online |
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![BSO203P](Maker_logo/infineon_technologies_ag.GIF)
INFINEON TECHNOLOGIES AG
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Part No. |
BSO203P
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OCR Text |
... to drain charge q g d - -15.1 -22.6 gate charge total q g v dd =-15v, i d =-8.2a, v gs =0 to -4.5v - -32.4 -48.6 gate plateau voltage v (p lateau ) v dd =-15v, i d =-8.2a - -1.6 - v reverse diode inverse diode continuous forward current i... |
Description |
8.2 A, 20 V, 0.021 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
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File Size |
308.49K /
8 Page |
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it Online |
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Price and Availability
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