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  256m-s Datasheet PDF File

For 256m-s Found Datasheets File :: 747    Search Time::1.906ms    
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    K524G2GACB-A050

Samsung semiconductor
Part No. K524G2GACB-A050
OCR Text ...ulti-chip package memory 4gb (256m x16) nand flash memory / 2gb (64m x32) mobile ddr sdram 1. revision history note : for more detailed...s web site. http://samsungelectronics .com/semiconductors/produ cts/products_index.html...
Description 4Gb NAND Flash 2Gb Mobile DDR

File Size 1,452.32K  /  94 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9E2G08B0M-FIB0 K9E2G08B0M-Y K9E2G08B0M-YCB0 K9E2G08B0M-YIB0 K9E2G08B0M-P K9E2G08B0M-PCB0 K9E2G08B0M-VCB0 K9E2G08B0M-VIB0 K9E2G08B0M-FCB0 K9E2G08B0M-PIB0
OCR Text 256M x 8 Bits NAND Flash Memory Advanced FLASH MEMORY Revision History Revision No. History 0.0 0.1 Draft Date Nov. 8th 2004 Nov...s Flash web site. http://www.samsung.com/Products/Semiconductor/ The attached datasheets are prepare...
Description 256M x 8 Bits NAND Flash Memory

File Size 893.70K  /  38 Page

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    IS43R16160B-6BL IS43R16160B-5BLI IS43R16160B-5BL-TR IS43R16160B-6BLI IS43R16160B-6BL-TR IS43R16160B-6BLI-TR IS43R16160B-

天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
Integrated Silicon Solu...
Part No. IS43R16160B-6BL IS43R16160B-5BLI IS43R16160B-5BL-TR IS43R16160B-6BLI IS43R16160B-6BL-TR IS43R16160B-6BLI-TR IS43R16160B-5BI IS43R16160B-5TI IS43R16160B-5TLI IS43R16160B-6BI IS43R16160B-6TLI IS46R16160B-6BLA1 IS46R16160B-6TLA1 IS43R83200B-6TLI IS43R83200B-5TLI IS46R83200B IS46R83200B-6TLA1
OCR Text ... Corporation A3S56D30/40ETP 256M Double Data Rate Synchronous DRAM CLK, /CLK Input Clock: CLK and /CLK are differential clock i...S I/O B uffer DQ S Bu ffer Memory Arra y Ba nk #0 Memory Arra y Ba nk #1 Memory Arra ...
Description 32Mx8, 16Mx16 256Mb DDR Synchronous DRAM

File Size 837.08K  /  41 Page

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    天津新技术产业园区管理委员会
Part No. IS43R16160B-6TLI IS43R16160B-5TL-TR IS43R16160B-6TL-TR IS43R16160B-5TLI-TR IS43R16160B-6TLI-TR
OCR Text ... Corporation A3S56D30/40ETP 256M Double Data Rate Synchronous DRAM CLK, /CLK Input Clock: CLK and /CLK are differential clock i...S I/O B uffer DQ S Bu ffer Memory Arra y Ba nk #0 Memory Arra y Ba nk #1 Memory Arra ...
Description
File Size 688.55K  /  40 Page

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    Elpida Memory, Inc.
Part No. EDS2516APTA-TI-E EDS2516APTA-75TI-E
OCR Text ...mory, inc. 2005 data sheet 256m bits sdram wtr (wide temperature range) eds2516apta-ti-e (16m words 16 bits) description the eds...s: sdram type d: monolithic device e d s 25 16 a p ta - 75 ti - e spec. detail ti: wtr ( ...
Description 256M bits SDRAM WTR (Wide Temperature Range)

File Size 708.66K  /  52 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KBE00G003M-D411 KBE00G003M-D4110
OCR Text ... 512m bit(64mx8) nand flash*2 / 256m bit(8mx8x4banks) mobile sdram*2 revision history the attached datasheets are prepared and approved b...s web site. http://samsungelectronics.com/semiconductors/products/products_index.html ...
Description NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107

File Size 1,254.33K  /  89 Page

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    Elpida Memory, Inc.
Part No. EDE2516ABSE-GE-E EDE2508ABSE-GE-E ELPIDAMEMORYINC.-EDE2516ABSE-GE
OCR Text ...005 preliminary data sheet 256m bits ddr2 sdram for hyper dimm ? ede2508abse-ge (32m words 8 bits) ede2516abse-ge (16m words ...s at 0 c tc + 85 c ? 3.9 s at + 85 c < tc + 95 c ? sstl_18 compatible i/o ? ...
Description 256M bits DDR2 SDRAM for HYPER DIMM 32M X 8 DDR DRAM, 0.4 ns, PBGA60

File Size 691.80K  /  66 Page

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    http://
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9E2G08U0M-Y K9E2G08U0M-F K9E2G08U0M-P K9E2G08U0M-V K9E2G08U0M
OCR Text 256m x 8 bits nand flash memory revision history the attached datasheets are prepared and approved by samsung el ectronics. samsung el ect...s flash web site. http://www.samsung.com/products/semiconductor/ flash memory 2 k9e2g0...
Description 256M x 8 Bits NAND Flash Memory

File Size 885.57K  /  38 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K9K2G16Q0M-Y K9K2G16Q0M-P K9K2G08U0M-F K9K2G08Q0M-P K9K2G08U0M-V K9XXG08UXM-P K9XXG16UXM-E K9XXG08UXM-Y K9XXG16UXM-Y
OCR Text 256m x 8 bit / 128m x 16 bit nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics...s id is changed (before) (after) 1. add the rp vs tr ,tf & rp vs ibusy graph for 1.8v device (page...
Description SSR H/S IO 230V 20A 4-32VDC
SSR H/S ZS 600V 70A 4-32VDC
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory 256M × 8 128M的16位NAND闪存
ULTRA2 LVD SCSI INTERNAL CBL 3 256M × 8 128M的16位NAND闪存
DSUB 25 M PCR/A G

File Size 684.25K  /  39 Page

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    EDS2532EEBH-9ATT-E

Elpida Memory
Part No. EDS2532EEBH-9ATT-E
OCR Text ... inc. 2005-2006 data sheet 256m bits sdram wtr (wide temperature range) eds2532eebh-9att (8m words 32 bits) specifications ? de...s ? operating ambient temperature range ? ta = ?20 c to +85 c features ? 32 organization ...
Description 256M bits SDRAM WTR (Wide Temperature Range)

File Size 732.21K  /  50 Page

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