...0 V A A W C C V Unit V
0.750.1 4.60.2 0.50.1 0.50.1 2.30.2 3 1.760.1
1
2
Collector-emitter voltage 2SA0794 (Base open) 2SA0794A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipa...
...to 2SC1359
5.00.2
Unit: mm
4.00.2
q
High transition frequency fT.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipati...
Description
Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
...6
0 30 m
200
W
-8
-4 -2
-6
100
-4
-2 A IB = 0
0
100 150 50 Ambient Temperature Ta (C)
0
-10 -20 -30 -40 -50 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics -10 Collector Current IC (...
...to 2SC1573
5.90.2
Unit: mm
4.90.2
q
High collector to emitter voltage VCEO.
+0.3 +0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current...
... -3 1.2 150 -55 to +150 Unit V
4.60.2 0.750.1
0.50.1 0.50.1 2.30.2 3 1.760.1
V V A A W C C
1 2
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collec...
Description
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
...to 2SC1980
5.00.2
Unit: mm
4.00.2
q q
High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25C)
Ratings -120 -120 -5 -50 -20 250 150 -55 ~ +150 Unit V V V mA mA mW C C
s Absolute Maximum Ratings
Parameter Collec...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)