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INTEGRATED SILICON SOLUTION INC
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Part No. |
IS42SM32400E-75EBLI
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OCR Text |
...rogrammable burst length: 1, 2, 4, 8, and full ? page programmable burst sequence: ? sequential and interleave ? auto refresh (cbr) ? t...bank addressing ba0, ba1 ba0, ba1 ba0, ba1 precharge addressing a10 a10 a10 addressing table descrip... |
Description |
4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
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File Size |
764.69K /
26 Page |
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Part No. |
HYM71V16735AT8-K
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OCR Text |
4 banks & 4k refresh this document is a general product descripti on and is subject to change without notice. hyundai electronics does not ...bank : one physical bank ? auto refresh and self refresh ? 4096 refresh cycles / 64ms ? programmabl... |
Description |
x72 SDRAM Module
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File Size |
211.45K /
14 Page |
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HYNIX SEMICONDUCTOR INC
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Part No. |
HY5PS12821F-Y6
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OCR Text |
...02 all changed master page 0.4 aug.2002 all corrected typos and change some descriptions 0.5 aug.2002 all corrected typos and wro...bank operations with single pulsed ras ? auto refresh and self refresh supported ? programmable tras... |
Description |
64M X 8 DDR DRAM, PBGA60
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File Size |
885.74K /
67 Page |
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HYNIX SEMICONDUCTOR INC
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Part No. |
HY5DU561622ELTP-L
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OCR Text |
...d ? programmable burst length 2/4/8 with both sequen- tial and interleave mode ? internal four bank operations with single pulsed /ras ? auto refresh and self refresh supported ? tras lock out function supported ? 8192 refresh cycles/64ms ... |
Description |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
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File Size |
235.08K /
29 Page |
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HYNIX SEMICONDUCTOR INC
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Part No. |
HMT325S6BFR6C-H9
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OCR Text |
4 / jul. 2010 1 204pin ddr3 sdram sodimm *hynix semiconductor reserves th e right to change products or specifications without notice. ddr3...bank address ba0-ba2 ba0-ba2 ba0-ba2 ba0-ba2 page size 2kb 2kb 1kb 1kb b48614/178.104.2.80/2010-07-1... |
Description |
256M X 64 DDR DRAM MODULE, DMA204
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File Size |
474.71K /
54 Page |
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it Online |
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Price and Availability
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