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  4.0a 400v Datasheet PDF File

For 4.0a 400v Found Datasheets File :: 2702    Search Time::3.343ms    
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    IRG4RC10 IRG4RC10K IRG4RC10KTR IRG4RC10KTRL IRG4RC10KTRR

International Rectifier
Part No. IRG4RC10 IRG4RC10K IRG4RC10KTR IRG4RC10KTRL IRG4RC10KTRR
OCR Text ... @ 125C, VGE = 15V * Generation 4 IGBT design provides higher efficiency than Generation 3 * Industry standard TO-252AA package C Short ...0A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimiz...
Description    INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.39V, @Vge=15V, Ic=5.0A)
600V UltraFast 8-25 kHz Discrete IGBT in a D-Pak package

File Size 132.99K  /  8 Page

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    Infineon Technologies
Part No. K10T60
OCR Text ...e(th) i c =0.3ma, v ce = v ge 4.1 4.6 5.7 v zero gate voltage collector current i ces v ce =600v , v ge =0v t j =25 c t j =175 ...0a 5a 10a 15a 20a 25a 30a t c =110c t c =80c i c , collector current 1v 10v 100v 1000v 0,1a 1a 10...
Description IGBT

File Size 794.51K  /  13 Page

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    IGW08T120

List of Unclassifed Manufacturers
ETC[ETC]
Infineon
Part No. IGW08T120
OCR Text ... TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C) Power Semiconductors 4 ...0A 0V 1V 2V 3V 4V 5V 6V 0A 0V 1V 2V 3V 4V 5V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typic...
Description Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 8A 1200V TO247 IGBT

File Size 299.44K  /  12 Page

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    IRF830AL IRF830AS

IRF[International Rectifier]
Part No. IRF830AL IRF830AS
OCR Text ... page 10 www.irf.com 1 5/4/00 IRF830AS/L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Volt...0A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400v, VGS = 0V, TJ = 125C 100 VGS...
Description 500V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
500V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A)
Power MOSFET(Vdss=500V/ Rds(on)max=1.40ohm/ Id=5.0A)

File Size 152.88K  /  10 Page

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    IRF830A IRF830APBF

International Rectifier, Corp.
Part No. IRF830A IRF830APBF
OCR Text .../C Reference to 25C, ID = 1mA 1.4 VGS = 10V, ID = 3.0A 4.5 V VDS = VGS, ID = 250A 25 VDS = 500V, VGS = 0V A 250 VDS = 400v, VGS = 0V, TJ = 125C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qg...
Description HEXFET Power MOSFET HEXFET功率MOSFET
500V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 138.21K  /  8 Page

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    IRF[International Rectifier]
Part No. IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR
OCR Text ...de and IGBT * Latest generation 4 IGBTs offer highest power density motor controls possible * This part replaces the IRGBC30K-S and IRGBC30M...0A -- V/C VGE = 0V, IC = 1.0mA -- IC = 14A VGE = 15V 2.7 IC = 16A V -- IC = 28A See Fig.2, 5 -- IC =...
Description 600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 159.80K  /  8 Page

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    INFINEON[Infineon Technologies AG]
Part No. IGW15T120
OCR Text ...se recovery. 50 30 520 60 1.3 1.4 2.7 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=1...0A 10Hz 100Hz 1kHz 10kHz 100kHz 0,1A 1V DC 10V 100V 1000V f, SWITCHING FREQU...
Description IGBTs & DuoPacks - 15A 1200V TO247 IGBT
Low Loss IGBT in Trench and Fieldstop Technology

File Size 407.26K  /  12 Page

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    Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. IGW25T120
OCR Text ... recovery. 50 30 560 70 2.0 2.2 4.2 mJ ns Symbol Conditions Value min. typ. max. Unit Switching Characteristic, Inductive Load, at Tj=150...0A 10Hz TC=110C TC=80C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10s 10A 50s 150s 1A 500s...
Description Low Loss IGBT in Trench and Fieldstop technology
IGBTs & DuoPacks - 25A 1200V TO247 IGBT

File Size 408.38K  /  12 Page

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    IKB06N60T

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. IKB06N60T
OCR Text ... 6A 3.6 none 40 700 100 nA S A 4.1 1.6 1.6 4.6 2.05 5.7 1.5 1.8 2.05 600 V Symbol Conditions Value min. typ. max. Unit Power Semiconduct...0A / s 123 190 5.3 450 ns nC A A/s td(on) tr td(off) tf Eon Eoff Ets T j = 25 C, V C C = 4 00V, I C ...
Description Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode

File Size 367.67K  /  14 Page

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For 4.0a 400v Found Datasheets File :: 2702    Search Time::3.343ms    
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