5.00.2
5.10.2
4.00.2
s Features
q q
High foward current transfer ratio hFE. High collector to emitter voltage VCEO.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base v...
...3.0 Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 -- -- V V V V s s Unit V V A A Test conditions I C = -25 mA, RBE = I E = -50 mA, IC = 0 VC...00 l C/l B = 1,0 200 VCE (sat)
-0.3 TC = 25C -0.1 -0.1
50
0
VCC = 30 V ICC = 500 IB1 = -...
...
2.50.1 1.0
Features
1.5
1.5 R0.9 R0.9
1.00.1
R
0.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SB745 2SB745A 2SB745 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
0.85
0.550.1
1.250....
Description
Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) 100 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR
5.00.2
4.00.2
High emitter to base voltage VEBO. Protective diodes and resistances between emitter and base can be omitted.
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to bas...
Description
Silicon PNP epitaxial planer type(For low-frequency amplification) 100 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
...mplementary to 2SD958
6.90.1 1.5 2.50.1 1.0
1.0 2.40.2 2.00.2 3.50.1
Unit: mm
s Features
q q q
1.5 R0.9 R0.9
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...)
Ratings -100 -120 -100 -120 -5 -1 -0.5 1 150 -55 ~ +150 Unit V
3
1.0-0.2
+0.1
0.40.08 0.50.08 1.50.1 3.00.15 2 1
4.0-0.20
0.40.04
emitter voltage 2SB789A Emitter to base voltage Peak collector current Collector current Col...