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  5.08 10 90 Datasheet PDF File

For 5.08 10 90 Found Datasheets File :: 47456    Search Time::3.109ms    
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    2SJ451

Hitachi Semiconductor
Part No. 2SJ451
OCR Text ...n-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...08 -0.08 -0.04 -0.04 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1...
Description    Silicon P-Channel MOS FET

File Size 39.56K  /  8 Page

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    2SJ452

HITACHI[Hitachi Semiconductor]
Part No. 2SJ452
OCR Text ...n-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G ...08 VGS = -2 V Pulse Test 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) -0.08 Tc = 75C ...
Description    Silicon P-Channel MOS FET

File Size 39.33K  /  8 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ... C D 30 -100 -50 -20 -10 -5 -2 -1 -0.5 0 s 1 m s = 20 10 m (1 s ot 10 Operation in this area is limited by...08 I D = -20 A V GS = -4 V 0.06 -5, -10 A 0.04 -5, -10, -20 A -10 V Pulse Test 0 40 80 120 Cat...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ475-01

FUJI[Fuji Electric]
Part No. 2SJ475-01
OCR Text ...25C Min. -60 -1,0 Typ. -1,5 -10 -0,2 10 0,08 0,045 15 2000 700 450 15 80 190 90 -2,0 160 0,9 Max. -2,5 -500 -1,0 100 0,11 0,06 3000 1050 680 25 120 290 140 -3,0 7,5 -25 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C ...
Description FAP-III Series

File Size 296.96K  /  2 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...8 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D G 3 S ...08 0.12 5 630 390 135 15 70 65 60 -1.0 60 Max -- -- -10 10 -2.0 0.11 0.17 -- -- -- -- -- -- -- -- --...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ504

HITACHI[Hitachi Semiconductor]
Part No. 2SJ504
OCR Text ...s -50 -10 V -8 V I D (A) -40 -4.5 V -6 V -5 V -4 V -30 -3.5 V -20 -3 V -10 VGS = -2.5 V 0 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 Case Temperature Tc (C) 160 -5, -10 A 100 30 10...
Description    Silicon P Channel MOS FET High Speed Power Switching

File Size 50.21K  /  10 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...r Min -60 20 -- -- -1.0 -- -- 6.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.08 0.11 11 850 420 110 12 75 125 75 -1.1 70 Max -- -- -10 10 -2.0 0.10 0.16 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = -...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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    2SJ532

HITACHI[Hitachi Semiconductor]
Part No. 2SJ532
OCR Text ...aracteristics -50 -10 V -8 V -4.5 V -50 Typical Transfer Characteristics V DS = -10 V Pulse Test Tc = -25 C 25 C (A) ID Drain Current ...08 V GS = -4 V -20 A 0.04 -10 V 0 -40 0 40 80 120 160 Case Temperature Tc (C) -5, -10 A Forward T...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 50.69K  /  9 Page

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    2SJ533

HITACHI[Hitachi Semiconductor]
Part No. 2SJ533
OCR Text ...put Characteristics -50 -8 V -3.5 V Pulse Test -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS = -10 V ...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 51.60K  /  9 Page

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    2SJ535

HITACHI[Hitachi Semiconductor]
Part No. 2SJ535
OCR Text ...put Characteristics -50 -8 V -3.5 V -50 Typical Transfer Characteristics V DS = -10 V I D (A) -5 V -30 -4 V VGS = -10 V -20 -3 V ...08 I D = -50 A V GS = -4 V 0.04 -10 A -20 A -50 A -10,-20A Tc = -25 C 10 3 1 0.3 V DS = -10 V ...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 53.39K  /  9 Page

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